JPS5732445A - Developing method for photoresist - Google Patents

Developing method for photoresist

Info

Publication number
JPS5732445A
JPS5732445A JP10657680A JP10657680A JPS5732445A JP S5732445 A JPS5732445 A JP S5732445A JP 10657680 A JP10657680 A JP 10657680A JP 10657680 A JP10657680 A JP 10657680A JP S5732445 A JPS5732445 A JP S5732445A
Authority
JP
Japan
Prior art keywords
wafer
developer
hold
resist pattern
rotating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10657680A
Other languages
Japanese (ja)
Inventor
Masahiko Nakamae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10657680A priority Critical patent/JPS5732445A/en
Publication of JPS5732445A publication Critical patent/JPS5732445A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To enable development of high accuracy in a high yield by dropping a developer on a semiconductor wafer having a photoresist film exposed for registration in a static state to hold the developer on the whole surface of the wafer and by rinsing and drying the wafer while rotating it. CONSTITUTION:A wafer 22 is supported on a vacuum chuck 21, and a fixed quantity of a developer is dropped on the wafer surface from a developer tube 23 attached to a developing cup 20 to hold the developer on the whole wafer surface by surface tension. At this time, the wafer 22 is in a static state. After a fixed time a rinse is sprayed from a rinse nozzle 24 to wash the wafer surface while rotating the wafer 22. No developer is scattered and stuck to the inside of the device. A resist pattern obtd. by this method is a resist pattern 33 formed on an oxide film 31 on the surface of a semiconductor substrate 30, and it has sharp and steep edge part. Development of high accuracy can be performed with high reproducibility, and since no wafer surface and no developing defects are included, a high yield is attained.
JP10657680A 1980-08-01 1980-08-01 Developing method for photoresist Pending JPS5732445A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10657680A JPS5732445A (en) 1980-08-01 1980-08-01 Developing method for photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10657680A JPS5732445A (en) 1980-08-01 1980-08-01 Developing method for photoresist

Publications (1)

Publication Number Publication Date
JPS5732445A true JPS5732445A (en) 1982-02-22

Family

ID=14437050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10657680A Pending JPS5732445A (en) 1980-08-01 1980-08-01 Developing method for photoresist

Country Status (1)

Country Link
JP (1) JPS5732445A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950440A (en) * 1982-09-16 1984-03-23 Fujitsu Ltd Developing method of resist film
US9006146B2 (en) 2010-05-10 2015-04-14 Furukawa Electric Co., Ltd. Superconducting cable

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149978A (en) * 1976-06-09 1977-12-13 Hitachi Ltd Developing treatment method of photoresist film
JPS5596944A (en) * 1979-01-17 1980-07-23 Matsushita Electric Ind Co Ltd Developing method
JPS569742A (en) * 1979-07-04 1981-01-31 Matsushita Electric Ind Co Ltd Developing method of photosensitive resin

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149978A (en) * 1976-06-09 1977-12-13 Hitachi Ltd Developing treatment method of photoresist film
JPS5596944A (en) * 1979-01-17 1980-07-23 Matsushita Electric Ind Co Ltd Developing method
JPS569742A (en) * 1979-07-04 1981-01-31 Matsushita Electric Ind Co Ltd Developing method of photosensitive resin

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950440A (en) * 1982-09-16 1984-03-23 Fujitsu Ltd Developing method of resist film
US9006146B2 (en) 2010-05-10 2015-04-14 Furukawa Electric Co., Ltd. Superconducting cable

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