JPS5734362A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5734362A
JPS5734362A JP11001880A JP11001880A JPS5734362A JP S5734362 A JPS5734362 A JP S5734362A JP 11001880 A JP11001880 A JP 11001880A JP 11001880 A JP11001880 A JP 11001880A JP S5734362 A JPS5734362 A JP S5734362A
Authority
JP
Japan
Prior art keywords
region
regions
collector
whereon
withstand voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11001880A
Other languages
Japanese (ja)
Inventor
Kenichi Muramoto
Takeo Shiomi
Masahiro Ogasawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11001880A priority Critical patent/JPS5734362A/en
Publication of JPS5734362A publication Critical patent/JPS5734362A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a power transistor with a built-in protective diode by a method wherein a region having high impurity density is provided within the area, whereon a depletion layer will be formed, on the obverse side of the collector region of a junction transistor. CONSTITUTION:The protective diode is consisted of the N<+> region 5 to be provided within the collector region 2 and a base region 3 and a device 8 is formed in one body. The region 5 is formed within the area whereon the collector depletion layer will be formed and the density ratio between the regions 5 and 2 is established in proportion to the distance between the regions 3 and 5 in such manner that the withstand voltage between the regions 3 and 5 will be made smaller than that of the regions 3 and 2. However, this distance should be within the scope with which the reverse withstand voltage between the collector and emitter will not be reduced. Through these procedures, a miniaturized and highly integrated device can be manufactured at a low cost and the reliability of which can also be increased.
JP11001880A 1980-08-11 1980-08-11 Semiconductor device Pending JPS5734362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11001880A JPS5734362A (en) 1980-08-11 1980-08-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11001880A JPS5734362A (en) 1980-08-11 1980-08-11 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5734362A true JPS5734362A (en) 1982-02-24

Family

ID=14525031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11001880A Pending JPS5734362A (en) 1980-08-11 1980-08-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5734362A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60226176A (en) * 1984-04-25 1985-11-11 Matsushita Electronics Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60226176A (en) * 1984-04-25 1985-11-11 Matsushita Electronics Corp Semiconductor device

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