JPS5736882A - Sutoraipugatadaburuheterosetsugoreezasoshi - Google Patents

Sutoraipugatadaburuheterosetsugoreezasoshi

Info

Publication number
JPS5736882A
JPS5736882A JP11243080A JP11243080A JPS5736882A JP S5736882 A JPS5736882 A JP S5736882A JP 11243080 A JP11243080 A JP 11243080A JP 11243080 A JP11243080 A JP 11243080A JP S5736882 A JPS5736882 A JP S5736882A
Authority
JP
Japan
Prior art keywords
layer
absorption
laser element
type double
stripe type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11243080A
Other languages
English (en)
Inventor
Shinsuke Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11243080A priority Critical patent/JPS5736882A/ja
Publication of JPS5736882A publication Critical patent/JPS5736882A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Semiconductor Lasers (AREA)
JP11243080A 1980-08-15 1980-08-15 Sutoraipugatadaburuheterosetsugoreezasoshi Pending JPS5736882A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11243080A JPS5736882A (ja) 1980-08-15 1980-08-15 Sutoraipugatadaburuheterosetsugoreezasoshi

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11243080A JPS5736882A (ja) 1980-08-15 1980-08-15 Sutoraipugatadaburuheterosetsugoreezasoshi

Publications (1)

Publication Number Publication Date
JPS5736882A true JPS5736882A (ja) 1982-02-27

Family

ID=14586437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11243080A Pending JPS5736882A (ja) 1980-08-15 1980-08-15 Sutoraipugatadaburuheterosetsugoreezasoshi

Country Status (1)

Country Link
JP (1) JPS5736882A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810885A (ja) * 1981-07-02 1983-01-21 インタ−ナシヨナル・スタンダ−ド・エレクトリツク・コ−ポレイシヨン 注入レ−ザ
JPS6066894A (ja) * 1983-09-22 1985-04-17 Sony Corp 半導体レ−ザ−
JPS60161688A (ja) * 1984-02-02 1985-08-23 Nec Corp 半導体レ−ザの製造方法
JPS6127694A (ja) * 1984-07-18 1986-02-07 Sony Corp 半導体レ−ザ−
WO2006030746A1 (ja) * 2004-09-13 2006-03-23 The University Of Tokyo 半導体発光素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5580386A (en) * 1978-12-11 1980-06-17 Fujitsu Ltd Manufacture of semiconductor light emitting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5580386A (en) * 1978-12-11 1980-06-17 Fujitsu Ltd Manufacture of semiconductor light emitting device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810885A (ja) * 1981-07-02 1983-01-21 インタ−ナシヨナル・スタンダ−ド・エレクトリツク・コ−ポレイシヨン 注入レ−ザ
JPS6066894A (ja) * 1983-09-22 1985-04-17 Sony Corp 半導体レ−ザ−
JPS60161688A (ja) * 1984-02-02 1985-08-23 Nec Corp 半導体レ−ザの製造方法
JPS6127694A (ja) * 1984-07-18 1986-02-07 Sony Corp 半導体レ−ザ−
WO2006030746A1 (ja) * 2004-09-13 2006-03-23 The University Of Tokyo 半導体発光素子

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