JPS577182A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS577182A
JPS577182A JP8118580A JP8118580A JPS577182A JP S577182 A JPS577182 A JP S577182A JP 8118580 A JP8118580 A JP 8118580A JP 8118580 A JP8118580 A JP 8118580A JP S577182 A JPS577182 A JP S577182A
Authority
JP
Japan
Prior art keywords
layer
type inp
transverse mode
active layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8118580A
Other languages
Japanese (ja)
Inventor
Takao Furuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8118580A priority Critical patent/JPS577182A/en
Publication of JPS577182A publication Critical patent/JPS577182A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a single transverse mode oscillating laser having a low threshold value by consisting a light waveguide exposed section in an uneven surface having periodicity in respect to the longitudinal direction of a fringed light waveguide layer. CONSTITUTION:An N type InGaAsP 22, an N type InP 23, an N type InGaAsP active layer 24, and a P type InP 25, are formed on an N type InP 21. Etching is applied as far as the substrate 21 to form a fringed multilayer waveguide path to cover with an N type InP 26. The removal of etching reaches as far as the surface of the waveguide path layer 22 except a current injection region to form grooves having a wavelength of about 0.2mum and a depth of about 0.1mum on the surface. Next, a P<+> layer 28 is placed on the current injection region to provide ohmic electrodes 29, 30. In this composition, the active layer 24 is buried by the layers 21, 25, 26 having refractive index smaller than the layer 24 and the wave propagating through the layer 24 and the path 22 receives few expanding loss in the horizontal direction and distribution reflection by periodic unevenness and feedback efficiency by the reflection of a plane of cleavage are increased. Because the horizontal width of the active layer is 2-3mum, higher order transverse mode is suppressed and single transverse mode oscillation can stably be maintained.
JP8118580A 1980-06-16 1980-06-16 Semiconductor laser Pending JPS577182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8118580A JPS577182A (en) 1980-06-16 1980-06-16 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8118580A JPS577182A (en) 1980-06-16 1980-06-16 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS577182A true JPS577182A (en) 1982-01-14

Family

ID=13739404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8118580A Pending JPS577182A (en) 1980-06-16 1980-06-16 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS577182A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151483A (en) * 1983-02-18 1984-08-29 Agency Of Ind Science & Technol Semiconductor laser device
JPS59152682A (en) * 1983-02-21 1984-08-31 Nippon Telegr & Teleph Corp <Ntt> Distributed reflection type semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151483A (en) * 1983-02-18 1984-08-29 Agency Of Ind Science & Technol Semiconductor laser device
JPS59152682A (en) * 1983-02-21 1984-08-31 Nippon Telegr & Teleph Corp <Ntt> Distributed reflection type semiconductor laser

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