JPS5736883A - Handotaireeza - Google Patents

Handotaireeza

Info

Publication number
JPS5736883A
JPS5736883A JP11126780A JP11126780A JPS5736883A JP S5736883 A JPS5736883 A JP S5736883A JP 11126780 A JP11126780 A JP 11126780A JP 11126780 A JP11126780 A JP 11126780A JP S5736883 A JPS5736883 A JP S5736883A
Authority
JP
Japan
Prior art keywords
layer
carrier
clad
electrode
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11126780A
Other languages
English (en)
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11126780A priority Critical patent/JPS5736883A/ja
Publication of JPS5736883A publication Critical patent/JPS5736883A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Semiconductor Lasers (AREA)
JP11126780A 1980-08-13 1980-08-13 Handotaireeza Pending JPS5736883A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11126780A JPS5736883A (ja) 1980-08-13 1980-08-13 Handotaireeza

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11126780A JPS5736883A (ja) 1980-08-13 1980-08-13 Handotaireeza

Publications (1)

Publication Number Publication Date
JPS5736883A true JPS5736883A (ja) 1982-02-27

Family

ID=14556865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11126780A Pending JPS5736883A (ja) 1980-08-13 1980-08-13 Handotaireeza

Country Status (1)

Country Link
JP (1) JPS5736883A (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5541741A (en) * 1978-09-20 1980-03-24 Hitachi Ltd Semiconductor laser device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5541741A (en) * 1978-09-20 1980-03-24 Hitachi Ltd Semiconductor laser device

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