JPS5740934A - Manufacture of semiconductor element - Google Patents

Abstract

PURPOSE:To find out the optimum etching condition for the subject semiconductor element by a method wherein apertures, to be used for observation of patterns, having different sizes are provided successively on the outside of the apertures for patterns required for the formation of the element on the film to be etched on a substrate and the apertures for pattern observation are compared with the aperture of the desired size which was provided in advance. CONSTITUTION:The pattern to be used for observation are consisted of patterns 1 and indexes 2 of different sizes which will be used as a judging standard. When patterning apertures required for the formation of the semiconductor element on a metal film is formed, a chemical selective etching is performed at the same time using a resin coating having the apertures for observation as a mask. While the etching is performed, the phenomenon of excessive etching appears on the small pattern for observation and then moves up to the larger patterns arranged according to size successively. At the same time, the condition of optimum etching can be found by having the indexes of the observation pattern, corresponding to the optimum etching of the semiconductor element whereon an etching is being performed, determined in advance. Through these procedures, the condition of etching can be known easily and the amount of optimum etching can also be determined.