JPS5740935A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5740935A
JPS5740935A JP55116647A JP11664780A JPS5740935A JP S5740935 A JPS5740935 A JP S5740935A JP 55116647 A JP55116647 A JP 55116647A JP 11664780 A JP11664780 A JP 11664780A JP S5740935 A JPS5740935 A JP S5740935A
Authority
JP
Japan
Prior art keywords
film
coated
electrodes
semiconductor device
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55116647A
Other languages
Japanese (ja)
Inventor
Toru Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55116647A priority Critical patent/JPS5740935A/en
Publication of JPS5740935A publication Critical patent/JPS5740935A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve the heat resisting property for the subject semiconductor device by a method wherein a nitriding Si film is coated on the organic insulating film consisting of triazine resin or rubber resin provided on a semiconductor substrate. CONSTITUTION:After Al electrodes 5 and 6 have been provided on the substrate 1 having prescribed conductive regions 2 and 3 through the intermediary of an SiO2 film 4 and an organic layer 7 consisting of triazine resin or rubber resin, to be used as an interlayer insulating film, has been formed on said electrodes 5 and 6, the nitriding silicon film 8 is coated on the above, the second wiring layer 9 is formed and an SiO2 film 10 is coated entirely on the above. Through these procedures, no alteration is developed when processed at the temperature up to 300 deg.C and the heat resisting property can be improved.
JP55116647A 1980-08-25 1980-08-25 Semiconductor device Pending JPS5740935A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55116647A JPS5740935A (en) 1980-08-25 1980-08-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55116647A JPS5740935A (en) 1980-08-25 1980-08-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5740935A true JPS5740935A (en) 1982-03-06

Family

ID=14692396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55116647A Pending JPS5740935A (en) 1980-08-25 1980-08-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5740935A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0254231U (en) * 1988-10-13 1990-04-19

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0254231U (en) * 1988-10-13 1990-04-19

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