JPS5771137A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5771137A
JPS5771137A JP55146792A JP14679280A JPS5771137A JP S5771137 A JPS5771137 A JP S5771137A JP 55146792 A JP55146792 A JP 55146792A JP 14679280 A JP14679280 A JP 14679280A JP S5771137 A JPS5771137 A JP S5771137A
Authority
JP
Japan
Prior art keywords
wiring
package
heat treatment
highly reliable
header
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55146792A
Other languages
Japanese (ja)
Inventor
Fumio Ichikawa
Shiro Hagiwara
Shintaro Ushio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP55146792A priority Critical patent/JPS5771137A/en
Publication of JPS5771137A publication Critical patent/JPS5771137A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To produce a highly reliable device capable of resisting moisture outside by a method wherein a protective coating is provided after completion of the bonding of the device to a header and of the wiring from the device to the package. CONSTITUTION:Diffusion layers 2, an insulator layer 3, and an Al wiring 4 are as usual formed on an Si substrate 1. The device is mounted on a package header 9 via an An-Si eutectic layer 11 and an Al lead 7 connects the pad 6 of the Al wiring 4 to a socket 8. Next, the device and package are placed in a heat treatment unit with the metal made socket 8 protected by a quartz made jig 12. The heat treatment consists of a reaction between SiH4 and NH4 at a temperature of approximately 300 deg.C, which results in an Si3N4 coating 5. The heat treated device is then potted. Thanks to the Si3N4 coating 5 keeping away moisture, C, O, N2 and the like when the device is live and thereby Al wiring deterioration and migrating ion caused fluctuations in MOS characteristics prevented, a highly reliable device is produced.
JP55146792A 1980-10-22 1980-10-22 Manufacture of semiconductor device Pending JPS5771137A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55146792A JPS5771137A (en) 1980-10-22 1980-10-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55146792A JPS5771137A (en) 1980-10-22 1980-10-22 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5771137A true JPS5771137A (en) 1982-05-01

Family

ID=15415636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55146792A Pending JPS5771137A (en) 1980-10-22 1980-10-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5771137A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58206129A (en) * 1982-05-27 1983-12-01 Seiko Epson Corp Semiconductor device
JPS59231840A (en) * 1983-06-14 1984-12-26 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPS62186553A (en) * 1986-02-12 1987-08-14 Seiko Epson Corp Molded structure of wire bonding part
JPS63313829A (en) * 1988-05-06 1988-12-21 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH02346A (en) * 1989-02-10 1990-01-05 Semiconductor Energy Lab Co Ltd Semiconductor device
JPH02345A (en) * 1989-02-10 1990-01-05 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58206129A (en) * 1982-05-27 1983-12-01 Seiko Epson Corp Semiconductor device
JPS59231840A (en) * 1983-06-14 1984-12-26 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPS62186553A (en) * 1986-02-12 1987-08-14 Seiko Epson Corp Molded structure of wire bonding part
JPS63313829A (en) * 1988-05-06 1988-12-21 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH02346A (en) * 1989-02-10 1990-01-05 Semiconductor Energy Lab Co Ltd Semiconductor device
JPH02345A (en) * 1989-02-10 1990-01-05 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device

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