JPS5740943A - Semiconductror device - Google Patents

Semiconductror device

Info

Publication number
JPS5740943A
JPS5740943A JP55116597A JP11659780A JPS5740943A JP S5740943 A JPS5740943 A JP S5740943A JP 55116597 A JP55116597 A JP 55116597A JP 11659780 A JP11659780 A JP 11659780A JP S5740943 A JPS5740943 A JP S5740943A
Authority
JP
Japan
Prior art keywords
bonding pad
oxide film
bonding
pad
unevenness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55116597A
Other languages
Japanese (ja)
Inventor
Yuji Kusano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55116597A priority Critical patent/JPS5740943A/en
Publication of JPS5740943A publication Critical patent/JPS5740943A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07553—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view

Landscapes

  • Bipolar Transistors (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To increase the adhesion between a bonding pad and an electrode metal, by a method wherein unevenness is provided at the oxide film located just under the bonding pad of a semiconductor device and the bonding area of the oxide film and the bonding pad is increased. CONSTITUTION:Unevenness 7 is formed on the surface located just under the bonding pad of an oxide film 2 provided on a semiconductor substrate 1 and the bonding pad 52 is provided at the uneven part to bond the pad to an external lead terminal 8. This method increases the bonding area between the oxide film and the bonding pad and improves the adhesion between the bonding pad and the metal electrode.
JP55116597A 1980-08-22 1980-08-22 Semiconductror device Pending JPS5740943A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55116597A JPS5740943A (en) 1980-08-22 1980-08-22 Semiconductror device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55116597A JPS5740943A (en) 1980-08-22 1980-08-22 Semiconductror device

Publications (1)

Publication Number Publication Date
JPS5740943A true JPS5740943A (en) 1982-03-06

Family

ID=14691079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55116597A Pending JPS5740943A (en) 1980-08-22 1980-08-22 Semiconductror device

Country Status (1)

Country Link
JP (1) JPS5740943A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57195834U (en) * 1981-06-09 1982-12-11
US5773899A (en) * 1993-09-30 1998-06-30 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Bonding pad for a semiconductor chip
USRE40819E1 (en) 1995-12-21 2009-07-07 Micron Technology, Inc. Semiconductor device with improved bond pads
CN107591359A (en) * 2017-08-15 2018-01-16 深圳市华星光电技术有限公司 The method of adhesiveness between array base palte and preparation method thereof, raising film layer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57195834U (en) * 1981-06-09 1982-12-11
US5773899A (en) * 1993-09-30 1998-06-30 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Bonding pad for a semiconductor chip
US5869357A (en) * 1993-09-30 1999-02-09 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Metallization and wire bonding process for manufacturing power semiconductor devices
USRE40819E1 (en) 1995-12-21 2009-07-07 Micron Technology, Inc. Semiconductor device with improved bond pads
CN107591359A (en) * 2017-08-15 2018-01-16 深圳市华星光电技术有限公司 The method of adhesiveness between array base palte and preparation method thereof, raising film layer

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