JPS574137A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS574137A
JPS574137A JP7816480A JP7816480A JPS574137A JP S574137 A JPS574137 A JP S574137A JP 7816480 A JP7816480 A JP 7816480A JP 7816480 A JP7816480 A JP 7816480A JP S574137 A JPS574137 A JP S574137A
Authority
JP
Japan
Prior art keywords
film
oxide film
nitriding
side section
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7816480A
Other languages
Japanese (ja)
Inventor
Katsuhiro Kawabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7816480A priority Critical patent/JPS574137A/en
Publication of JPS574137A publication Critical patent/JPS574137A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
    • H10W10/0124—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves the regions having non-rectangular shapes, e.g. rounded
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the rising and the expansion in the lateral direction of an oxide film isolation layer by a method wherein an anisotropic etching is performed on the aperture section of the mask consisting of an oxide film and a nitriding film, a thin oxide film is provided on the etched side section and then an oxidation treatment is performed. CONSTITUTION:The thin oxide film 12 and the nitriding film 13 are formed on the Si substrate 11, consisting of a (100) face, in the process of formation of a field oxide film which will be used for separation of elements of MOSIC, for example. Then, the nitriding film 13 and the oxide film 12 located on the field section are removed and after the side section of the substrate 11 has been turned to a (111) face by performing an anisotropic etching, a thermal nitriding film 14 is formed by heating the above in NH3. Then, a thin (20Angstrom or thereabouts) nitriding film 141 is remained on the thickly formed side section by performing a plasma etching and subsequently, a field film 15 is formed by performing an oxidation by heat. Through these procedures, no rising is generated on the isolation oxide film layer 15 and the breaking of wires and the like can be prevented. Also, as the layer 15 is not expanded in lateral direction, a highly integrated IC can be obtained.
JP7816480A 1980-06-10 1980-06-10 Manufacture of semiconductor device Pending JPS574137A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7816480A JPS574137A (en) 1980-06-10 1980-06-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7816480A JPS574137A (en) 1980-06-10 1980-06-10 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS574137A true JPS574137A (en) 1982-01-09

Family

ID=13654283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7816480A Pending JPS574137A (en) 1980-06-10 1980-06-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS574137A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207539B1 (en) 1996-12-27 2001-03-27 Nec Corporation Semiconductor device having field isolating film of which upper surface is flat and method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207539B1 (en) 1996-12-27 2001-03-27 Nec Corporation Semiconductor device having field isolating film of which upper surface is flat and method thereof
KR100399084B1 (en) * 1996-12-27 2004-02-11 닛뽕덴끼 가부시끼가이샤 Semiconductor device having a field-shielding film whose top surface is flat and method of manufacturing the same

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