JPS574159A - Thyristor - Google Patents

Abstract

PURPOSE:To shorten turn-on time by forming a gate electrode in an approximate H-shaped form which is arranged at the center of an emitter layer approximately symmetrical. CONSTITUTION:PNPN4 layers consisting of the P emitter layer, an N base layer, a P base layer 4 and the N emitter layer 5 are laminated in a discoid Si wafer. A large number of short circuit holes 11, which penetrate some parts of the layer 5 and expose the layer 4, are formed, and the layer 4 is short-circuited with the layer 5 by a cathode electrode 8 through the short circuit holes 11. There exists an auxiliary thyristor at the center section of the wafer, the gate electrode surrounds the auxiliary thyristor in a ringed shape at the center section of the wafer, and arms extend in the approximately symmetrical H-shaped form from the center of the Si wafer while being connected to the ring. Accordingly, distances up to each point of the layer 5 from the electrode 10 shorten, and the presence of the short circuit holes 11 hardly function as obstacles in regard to an extent of currents. Thus, turn-on time is shortened.