JPS574162A - Manufacture of charge transfer device - Google Patents

Manufacture of charge transfer device

Info

Publication number
JPS574162A
JPS574162A JP7809380A JP7809380A JPS574162A JP S574162 A JPS574162 A JP S574162A JP 7809380 A JP7809380 A JP 7809380A JP 7809380 A JP7809380 A JP 7809380A JP S574162 A JPS574162 A JP S574162A
Authority
JP
Japan
Prior art keywords
layer
mask
light transmitting
electrodes
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7809380A
Other languages
Japanese (ja)
Inventor
Koji Otsu
Takashi Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP7809380A priority Critical patent/JPS574162A/en
Publication of JPS574162A publication Critical patent/JPS574162A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To prevent the generation of the reverse current of charges by forming electrodes lest one electrode should span on the other electrode extending over the whole region of a charge storing transferring section. CONSTITUTION:A light transmitting insulating layer 10 is made up on a main surface of a semiconductor substrate 7. A light transmitting polycrystal Si layer 21 is built up on the layer 10 in a beltlike shape. One part of each corresponding one side of the layer 21 is coated with an oxidation resisting mask 23. The surface of the layer 21 is oxidized using the mask 23 as a mask, and a light transmitting insulating layer 14 is formed. The mask 23 and an oxide mask 23' under the mask 23 are removed, one part of the layer 21 is exposed, and a light transmitting polycrystal Si layer 22 is made up spanning on a secion between each exposed section and the adjacent layer 21 opposing to the section. Impurity ions are injected using the layers 21, 22 as masks, and channel stopper regions 13 are built up. Accordingly, the reverse current of charges does not generate because the electrodes 11, 12 do not span on other electrodes 12, 11.
JP7809380A 1980-06-10 1980-06-10 Manufacture of charge transfer device Pending JPS574162A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7809380A JPS574162A (en) 1980-06-10 1980-06-10 Manufacture of charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7809380A JPS574162A (en) 1980-06-10 1980-06-10 Manufacture of charge transfer device

Publications (1)

Publication Number Publication Date
JPS574162A true JPS574162A (en) 1982-01-09

Family

ID=13652239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7809380A Pending JPS574162A (en) 1980-06-10 1980-06-10 Manufacture of charge transfer device

Country Status (1)

Country Link
JP (1) JPS574162A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074475A (en) * 1983-09-29 1985-04-26 Sony Corp Solid state image pickup element
FR2583576A1 (en) * 1985-06-18 1986-12-19 Thomson Csf CHARGE TRANSFER DEVICE WITH COUPLED GRIDS

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS568877A (en) * 1979-07-04 1981-01-29 Chiyou Lsi Gijutsu Kenkyu Kumiai Charge coupling element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS568877A (en) * 1979-07-04 1981-01-29 Chiyou Lsi Gijutsu Kenkyu Kumiai Charge coupling element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074475A (en) * 1983-09-29 1985-04-26 Sony Corp Solid state image pickup element
FR2583576A1 (en) * 1985-06-18 1986-12-19 Thomson Csf CHARGE TRANSFER DEVICE WITH COUPLED GRIDS

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