JPS574169A - Gaas field-effect transistor - Google Patents

Gaas field-effect transistor

Info

Publication number
JPS574169A
JPS574169A JP7816680A JP7816680A JPS574169A JP S574169 A JPS574169 A JP S574169A JP 7816680 A JP7816680 A JP 7816680A JP 7816680 A JP7816680 A JP 7816680A JP S574169 A JPS574169 A JP S574169A
Authority
JP
Japan
Prior art keywords
layer
gate electrode
type
added
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7816680A
Other languages
English (en)
Inventor
Hisashi Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7816680A priority Critical patent/JPS574169A/ja
Publication of JPS574169A publication Critical patent/JPS574169A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP7816680A 1980-06-10 1980-06-10 Gaas field-effect transistor Pending JPS574169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7816680A JPS574169A (en) 1980-06-10 1980-06-10 Gaas field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7816680A JPS574169A (en) 1980-06-10 1980-06-10 Gaas field-effect transistor

Publications (1)

Publication Number Publication Date
JPS574169A true JPS574169A (en) 1982-01-09

Family

ID=13654340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7816680A Pending JPS574169A (en) 1980-06-10 1980-06-10 Gaas field-effect transistor

Country Status (1)

Country Link
JP (1) JPS574169A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5879772A (ja) * 1981-11-06 1983-05-13 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS61164415A (ja) * 1985-01-16 1986-07-25 古河電気工業株式会社 同相２条フラツト布設電力ケ−ブルの相配列方法
JPS61199667A (ja) * 1985-02-28 1986-09-04 Oki Electric Ind Co Ltd ＧａＡｓ電界効果トランジスタ
EP0287811A1 (en) * 1987-04-23 1988-10-26 International Business Machines Corporation Field effect transistor and method of making
CN113451387A (zh) * 2020-03-24 2021-09-28 清华大学 用于过压击穿功能的缓冲区变掺杂结构及半导体器件

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080086A (ja) * 1973-11-12 1975-06-28

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080086A (ja) * 1973-11-12 1975-06-28

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5879772A (ja) * 1981-11-06 1983-05-13 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS61164415A (ja) * 1985-01-16 1986-07-25 古河電気工業株式会社 同相２条フラツト布設電力ケ−ブルの相配列方法
JPS61199667A (ja) * 1985-02-28 1986-09-04 Oki Electric Ind Co Ltd ＧａＡｓ電界効果トランジスタ
EP0287811A1 (en) * 1987-04-23 1988-10-26 International Business Machines Corporation Field effect transistor and method of making
CN113451387A (zh) * 2020-03-24 2021-09-28 清华大学 用于过压击穿功能的缓冲区变掺杂结构及半导体器件
WO2021189838A1 (zh) * 2020-03-24 2021-09-30 清华大学 用于过压击穿功能的缓冲区变掺杂结构及半导体器件
CN113451387B (zh) * 2020-03-24 2022-12-23 清华大学 用于过压击穿功能的缓冲区变掺杂结构及半导体器件

Similar Documents

Publication Publication Date Title
JPS6442176A (en) Semiconductor device and manufacture thereof
EP0052989A3 (en) Method of fabricating a semiconductor device
EP0085916A3 (en) Method of fabricating field effect transistors
EP0148595A3 (en) Method of fabricating mesa mosfet using overhang mask and resulting structure
JPS574169A (en) Gaas field-effect transistor
JPS5646562A (en) Semiconductor device
JPS56155531A (en) Manufacture of semiconductor device
JPS57128070A (en) Field-effect transistor
JPS5710267A (en) Semiconductor device
JPS5712562A (en) Recess gate type field effect transistor
JPS56126977A (en) Junction type field effect transistor
JPS5676571A (en) Mos field effect transistor and manufacture thereof
JPS5671980A (en) Schottky barrier gate type field effect transistor and preparation method thereof
JPS55134974A (en) Manufacturing of semiconductor device
JPS572579A (en) Manufacture of junction type field effect transistor
JPS57193068A (en) Semiconductor device
JPS57112075A (en) Insulating gate fet
JPS6034073A (ja) ショットキ−ゲ−ト型電界効果トランジスタの製造方法
JPS5673470A (en) Manufacture of semiconductor device
JPS57143866A (en) Insulating gate type field-effect transistor and its manufacture
JPS55105376A (en) Manufacture process of semiconductor device
JPS57199266A (en) Field effect transistor and manufacture thereof
JPS6428870A (en) Manufacture of field-effect transistor
JPS57120371A (en) Manufacture of complementary type mos semiconductor
JPS5577173A (en) Preparation of insulating gate-type electric field- effective transistor