JPS5743429A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5743429A
JPS5743429A JP55118756A JP11875680A JPS5743429A JP S5743429 A JPS5743429 A JP S5743429A JP 55118756 A JP55118756 A JP 55118756A JP 11875680 A JP11875680 A JP 11875680A JP S5743429 A JPS5743429 A JP S5743429A
Authority
JP
Japan
Prior art keywords
film
etching
wafer
silicon
dicing lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55118756A
Other languages
Japanese (ja)
Other versions
JPH038111B2 (en
Inventor
Junichi Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55118756A priority Critical patent/JPS5743429A/en
Publication of JPS5743429A publication Critical patent/JPS5743429A/en
Publication of JPH038111B2 publication Critical patent/JPH038111B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To perform the formation of an accurate pattern by forming a coating film on the dicing line of a wafer, thereby obtaining stable etching effect. CONSTITUTION:An oxidized silicon film 12 is formed as a protective film on the surface of a wafer 11, and a nitrided silicon film 13 is further formed on the film 12. Dicing lines 15 are also covered with silicon. Then, a photoresist 14 as an etching protective film is coated on the dicing lines, is then developed, and a resist pattern is formed. When it is then etched with plasma, the nitrided silicon film not covered with the photoresist 14 becomes gaseous compound, and is thus removed. Since the etching velocity of the surface of the wafer 11 including the dicing lines 15 is faster than that of the oxidized silicon at the nitrided silicon by the plasma etching at this time, it can prevent the influence of the etching reaction, and desired pattern can be obtained on the surface of the wafer 11.
JP55118756A 1980-08-28 1980-08-28 Manufacture of semiconductor device Granted JPS5743429A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55118756A JPS5743429A (en) 1980-08-28 1980-08-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55118756A JPS5743429A (en) 1980-08-28 1980-08-28 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5743429A true JPS5743429A (en) 1982-03-11
JPH038111B2 JPH038111B2 (en) 1991-02-05

Family

ID=14744272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55118756A Granted JPS5743429A (en) 1980-08-28 1980-08-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5743429A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4942289A (en) * 1972-05-03 1974-04-20
JPS501313U (en) * 1973-04-27 1975-01-08
JPS5513430A (en) * 1978-07-11 1980-01-30 Nec Corp Test device for logic circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4942289A (en) * 1972-05-03 1974-04-20
JPS501313U (en) * 1973-04-27 1975-01-08
JPS5513430A (en) * 1978-07-11 1980-01-30 Nec Corp Test device for logic circuit

Also Published As

Publication number Publication date
JPH038111B2 (en) 1991-02-05

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