JPS5743475A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5743475A
JPS5743475A JP56089818A JP8981881A JPS5743475A JP S5743475 A JPS5743475 A JP S5743475A JP 56089818 A JP56089818 A JP 56089818A JP 8981881 A JP8981881 A JP 8981881A JP S5743475 A JPS5743475 A JP S5743475A
Authority
JP
Japan
Prior art keywords
base
layer
type
semiconductor device
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56089818A
Other languages
Japanese (ja)
Other versions
JPS6366430B2 (en
Inventor
Junichi Nishizawa
Kentaro Nakamura
Takashi Kiregawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Semiconductor Research Foundation
Original Assignee
Mitsubishi Electric Corp
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Semiconductor Research Foundation filed Critical Mitsubishi Electric Corp
Priority to JP56089818A priority Critical patent/JPS5743475A/en
Publication of JPS5743475A publication Critical patent/JPS5743475A/en
Publication of JPS6366430B2 publication Critical patent/JPS6366430B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To reduce the lateral base resistance of a semiconductor device by disposing a high impurity density region formed in a base region at the side having lower impurity density of the region adjacent to the base. CONSTITUTION:A semiconductor device has an n type first layer 6, a p type second laye 7 and an n type third layer 8. The second layer 7 of these layers is divided into relatively high and low impurity density p type regions 9 in contact with the third layer 8, the high density regions 9 are arranged approximately in parallel as base electrodes. Thus, the lateral resistance of the base is reduced, and the voltage effect applied to the base is rapidly expanded to the remote region from the base terminal and/or in a depletion layer to the third layer 8, thereby facilitaing the flow rate control of the carrier.
JP56089818A 1981-06-11 1981-06-11 Semiconductor device Granted JPS5743475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56089818A JPS5743475A (en) 1981-06-11 1981-06-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56089818A JPS5743475A (en) 1981-06-11 1981-06-11 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12699375A Division JPS53124086A (en) 1975-10-21 1975-10-21 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP63057379A Division JPS63283062A (en) 1988-03-12 1988-03-12 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5743475A true JPS5743475A (en) 1982-03-11
JPS6366430B2 JPS6366430B2 (en) 1988-12-20

Family

ID=13981322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56089818A Granted JPS5743475A (en) 1981-06-11 1981-06-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5743475A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012388A (en) * 1983-06-30 1985-01-22 Ishikawajima Harima Heavy Ind Co Ltd How to build a bow bulbous bow

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026480A (en) * 1973-07-09 1975-03-19
JPS525273A (en) * 1975-07-02 1977-01-14 Hitachi Ltd Transistor
JPS5222885A (en) * 1975-08-14 1977-02-21 Matsushita Electronics Corp Transistor and manufacturing system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026480A (en) * 1973-07-09 1975-03-19
JPS525273A (en) * 1975-07-02 1977-01-14 Hitachi Ltd Transistor
JPS5222885A (en) * 1975-08-14 1977-02-21 Matsushita Electronics Corp Transistor and manufacturing system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012388A (en) * 1983-06-30 1985-01-22 Ishikawajima Harima Heavy Ind Co Ltd How to build a bow bulbous bow

Also Published As

Publication number Publication date
JPS6366430B2 (en) 1988-12-20

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