JPS5745949A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5745949A
JPS5745949A JP55121569A JP12156980A JPS5745949A JP S5745949 A JPS5745949 A JP S5745949A JP 55121569 A JP55121569 A JP 55121569A JP 12156980 A JP12156980 A JP 12156980A JP S5745949 A JPS5745949 A JP S5745949A
Authority
JP
Japan
Prior art keywords
aluminum
film
mask
groove
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55121569A
Other languages
Japanese (ja)
Other versions
JPS6258543B2 (en
Inventor
Hiroshi Tokunaga
Ryoji Abe
Hiroshi Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55121569A priority Critical patent/JPS5745949A/en
Publication of JPS5745949A publication Critical patent/JPS5745949A/en
Publication of JPS6258543B2 publication Critical patent/JPS6258543B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To perform the microminiaturization of an aluminum wire and the flattening of the aluminum surface by forming a wiring pattern with the groove of Al buried insulating layer and forming an anode oxidized film on the aluminum surface as a mask. CONSTITUTION:A PSG5 on an Si substrate 1 is ion milled to form a fine groove 6, aluminums 7, 7' are sputtered, and are covered with anode oxidized films 8, 8'. A resist mask 9 is selectively formed at the groove 6, the aluminum layer 7' is removed with fluoric acid solution, and further the PSG5 and the resist 9 are ion milled to expose the film 8. The etching speed of the film 8 is 1/5 of aluminum as mask, thereby preventing the overetching. When the PSG10 is again eventually grown, a flat insulating layer 10 is obtained on the flat aluminum wire layer 7.
JP55121569A 1980-09-02 1980-09-02 Manufacture of semiconductor device Granted JPS5745949A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55121569A JPS5745949A (en) 1980-09-02 1980-09-02 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55121569A JPS5745949A (en) 1980-09-02 1980-09-02 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5745949A true JPS5745949A (en) 1982-03-16
JPS6258543B2 JPS6258543B2 (en) 1987-12-07

Family

ID=14814471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55121569A Granted JPS5745949A (en) 1980-09-02 1980-09-02 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5745949A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5295605A (en) * 1989-10-25 1994-03-22 Miura Research Co. Shutter device for pressure container

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5295605A (en) * 1989-10-25 1994-03-22 Miura Research Co. Shutter device for pressure container

Also Published As

Publication number Publication date
JPS6258543B2 (en) 1987-12-07

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