JPS5796549A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5796549A
JPS5796549A JP17293480A JP17293480A JPS5796549A JP S5796549 A JPS5796549 A JP S5796549A JP 17293480 A JP17293480 A JP 17293480A JP 17293480 A JP17293480 A JP 17293480A JP S5796549 A JPS5796549 A JP S5796549A
Authority
JP
Japan
Prior art keywords
electrode wiring
circumference
insulating film
contact hole
layer insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17293480A
Other languages
Japanese (ja)
Inventor
Seiji Terajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP17293480A priority Critical patent/JPS5796549A/en
Publication of JPS5796549A publication Critical patent/JPS5796549A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent an electrode wiring of a semiconductor integrated circuit device which uses poly-crystal Si as electrode wiring material from breaking by a method wherein a circumference of a contact hole formed in a layer insulating film on an electrode wiring is given a smooth shape by removing protrusions. CONSTITUTION:A poly-crystal Si electrode wiring 6 is formed on a field insulatting layer 4 on an Si substrate 5 and is covered by a layer insulating film 3. A contact hole for the electrode wiring 6 is formed in the layer insulating film 3 by etching. As the layer insulating film 3 has a difference in level on the electrode wiring 6, the circumference of the contact hole has protruded shape. After resist 7 is coated, the whole surface is etched by oxygen plasma 8 and protrusions on the circumference of the contact hole are exposed. Then the protrusions are removed by etching so as to give the circumference a smooth shape. The resist 7 is removed and an Al wiring 2 is formed.
JP17293480A 1980-12-08 1980-12-08 Manufacture of semiconductor device Pending JPS5796549A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17293480A JPS5796549A (en) 1980-12-08 1980-12-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17293480A JPS5796549A (en) 1980-12-08 1980-12-08 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5796549A true JPS5796549A (en) 1982-06-15

Family

ID=15951056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17293480A Pending JPS5796549A (en) 1980-12-08 1980-12-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5796549A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50114185A (en) * 1974-02-16 1975-09-06
JPS5144877A (en) * 1974-10-16 1976-04-16 Tokyo Shibaura Electric Co Handotaisochino seizohoho
JPS5261980A (en) * 1975-11-18 1977-05-21 Toshiba Corp Production of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50114185A (en) * 1974-02-16 1975-09-06
JPS5144877A (en) * 1974-10-16 1976-04-16 Tokyo Shibaura Electric Co Handotaisochino seizohoho
JPS5261980A (en) * 1975-11-18 1977-05-21 Toshiba Corp Production of semiconductor device

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