JPS5748236A - Dry etching device - Google Patents

Dry etching device

Info

Publication number
JPS5748236A
JPS5748236A JP12299480A JP12299480A JPS5748236A JP S5748236 A JPS5748236 A JP S5748236A JP 12299480 A JP12299480 A JP 12299480A JP 12299480 A JP12299480 A JP 12299480A JP S5748236 A JPS5748236 A JP S5748236A
Authority
JP
Japan
Prior art keywords
film
substrate
frequency
etching device
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12299480A
Other languages
Japanese (ja)
Inventor
Katsuya Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12299480A priority Critical patent/JPS5748236A/en
Publication of JPS5748236A publication Critical patent/JPS5748236A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a dry etching device with high reproducibility and reliability, by providing a thick film etching monitor of crystal oscillation system inside an etching device to observe etching speed of a substrate to be processed. CONSTITUTION:A parallel plate electrode 11 of one side in a vacuum tank is provided with a monitor head 12, crystal oscillator 13, and a lead 14 for measuring frequency so that they are buried therein. While a substrate to be processed 15, whereon an Al film is deposited by evaporation, is placed on a plate electrode 11, the Al film is deposited by evaporation on the crystal oscillator 13. Into said dry etching device, gas is introduced, and between the plate electrodes, the high-frequency voltage is impressed to etch the Al film on the substrate through plasma by discharge, while the Al film on the crystal oscillator 13 is also etched to fluctuate the frequency of the oscillator according to the film thickness. When the fluctuation of frequency for the Al film is in advance determined, the etching speed of the Al film can be observed, whereby the etching speed of the substrate can easily be measured.
JP12299480A 1980-09-05 1980-09-05 Dry etching device Pending JPS5748236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12299480A JPS5748236A (en) 1980-09-05 1980-09-05 Dry etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12299480A JPS5748236A (en) 1980-09-05 1980-09-05 Dry etching device

Publications (1)

Publication Number Publication Date
JPS5748236A true JPS5748236A (en) 1982-03-19

Family

ID=14849645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12299480A Pending JPS5748236A (en) 1980-09-05 1980-09-05 Dry etching device

Country Status (1)

Country Link
JP (1) JPS5748236A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62176487A (en) * 1986-01-29 1987-08-03 株式会社　鈴木製作所 Looper driving apparatus of binding sewing machine

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62176487A (en) * 1986-01-29 1987-08-03 株式会社　鈴木製作所 Looper driving apparatus of binding sewing machine

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