JPS5748252A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5748252A
JPS5748252A JP55124327A JP12432780A JPS5748252A JP S5748252 A JPS5748252 A JP S5748252A JP 55124327 A JP55124327 A JP 55124327A JP 12432780 A JP12432780 A JP 12432780A JP S5748252 A JPS5748252 A JP S5748252A
Authority
JP
Japan
Prior art keywords
electrode pad
silicone resin
metal thin
semiconductor substrate
thin wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55124327A
Other languages
Japanese (ja)
Other versions
JPS6127911B2 (en
Inventor
Hiroshi Yokota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55124327A priority Critical patent/JPS5748252A/en
Publication of JPS5748252A publication Critical patent/JPS5748252A/en
Publication of JPS6127911B2 publication Critical patent/JPS6127911B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/121Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H10W74/476Organic materials comprising silicon
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/015Manufacture or treatment of bond wires
    • H10W72/01515Forming coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07551Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To obtain the semiconductor device of a stabilized surface having no defective connection by a method wherein all the sections, excluding the surface of an electrode pad, on the surface of a semiconductor substrate providing the electrode pad is covered by a silicone resin layer and a metal thin wire is connected to the electrode pad. CONSTITUTION:Ultraviolet ray exposing type silicone resin 11 is applied on the semiconductor substrate 1 having the electrode pad 4 and a circuit element. Then, a mask pattern is provided and the silicone resin 11 is hardened by irradiating ultraviolet rays for 10-20sec using a high voltage mercury lamp of approximately 1.5kw. Subsequently, the unhardened silicone resin on the electrode pad 4 is removed using an organic solvent such as xylene and the like. Lastly, the electrode pad 4 and a lead frame 7 are connected using a metal thin wire 8 and are molded and sealed using a molding material 9. Through these procedures, no distorsion due to difference in thermal expansion coefficient is generated between the electrode pad 4 and the point of connection, because no resin is coated on the electrode pad 4.
JP55124327A 1980-09-08 1980-09-08 Semiconductor device and manufacture thereof Granted JPS5748252A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55124327A JPS5748252A (en) 1980-09-08 1980-09-08 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55124327A JPS5748252A (en) 1980-09-08 1980-09-08 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5748252A true JPS5748252A (en) 1982-03-19
JPS6127911B2 JPS6127911B2 (en) 1986-06-27

Family

ID=14882588

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55124327A Granted JPS5748252A (en) 1980-09-08 1980-09-08 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5748252A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63226046A (en) * 1986-12-19 1988-09-20 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Manufacture of semiconductor device with reduced packaging stress
US5043793A (en) * 1989-08-07 1991-08-27 U.S. Philips Corporation Semiconductor device with stress relief coating at the periphery of the device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63226046A (en) * 1986-12-19 1988-09-20 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Manufacture of semiconductor device with reduced packaging stress
US5043793A (en) * 1989-08-07 1991-08-27 U.S. Philips Corporation Semiconductor device with stress relief coating at the periphery of the device

Also Published As

Publication number Publication date
JPS6127911B2 (en) 1986-06-27

Similar Documents

Publication Publication Date Title
JPS5748252A (en) Semiconductor device and manufacture thereof
JPS5670655A (en) Manufacture of electronic circuit mounting device
JPS54148484A (en) Manufacture of semiconductor wafer test device
JPS55138240A (en) Manufacture of semiconductor device
JPS55138241A (en) Sealing structure for semiconductor device
JPS57183030A (en) Manufacture of semiconductor device
US4557986A (en) High resolution lithographic process
JPS57167659A (en) Manufacture of semiconductor device
JPH03256393A (en) Manufacturing method of printed wiring board
JPS57128030A (en) Exposing method for electron beam
JPS5721820A (en) Forming method for pattern and exposure device
JPS6439764A (en) Manufacture of semiconductor device
JPS5779670A (en) Manufacture of semiconductor device
JPS6232617A (en) Semiconductor device and its manufacture
JPS56167328A (en) Manufacture of semiconductor device
JPS6459815A (en) Formation of pattern
JPS5689741A (en) Dryplate for photomasking
JPS5749230A (en) Forming method for electrode
JPH04163926A (en) Sealing method for semiconductor
JPH01300531A (en) Sealing method for semiconductor element
JPS54158868A (en) Manufacture of semiconductor device
JPH04369231A (en) Fabrication of semiconductor device
JPS5627948A (en) Hybrid integrated circuit
JPS5388578A (en) Production of semiconductor device
JPS5632731A (en) Semiconductor device