JPS644069A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS644069A JPS644069A JP15783787A JP15783787A JPS644069A JP S644069 A JPS644069 A JP S644069A JP 15783787 A JP15783787 A JP 15783787A JP 15783787 A JP15783787 A JP 15783787A JP S644069 A JPS644069 A JP S644069A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- source
- drain diffusion
- titanium silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 4
- 229910021341 titanium silicide Inorganic materials 0.000 abstract 4
- 238000010438 heat treatment Methods 0.000 abstract 3
- 238000005468 ion implantation Methods 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To simplify a process and to fine a semiconductor element without a necessity of estimating a margin on a design of a semiconductor element, by forming contact holes in a self-alignment manner in source/drain diffusion layers. CONSTITUTION:A silicon oxide film 5 is made to grow on an active region to perform growth of a polycrystalline silicon film and removed except on a part of a gate electrode 6 by an etching method. Next heat treatment is performed to form a nitride film 7 on the surface of a gate electrode 6. An ion implantation layer 8 is formed on the exposed surface. A Ti film 9 is piled and an annealing process is performed in an inactive gas so that the upper part of the ion implantation layer 8 is made to become a titanium silicide layer 10. Next heat treatment is performed in an N2 gas atmosphere so as to form a titanium silicide film 11 on the titanium silicide layer 10 on the source/drain diffusion layer, and heat treatment oxidation is performed in an O2 atmosphere. A dry etching process is used to remove the oxide film and to form an ion implantating layer 8, a titanium silicide layer 10, a source/drain diffusion layer 14. Piling of wiring metals and patterning of them are performed to form metallic wirings 15 connected with the source/drain diffusion layer 14.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15783787A JPS644069A (en) | 1987-06-26 | 1987-06-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15783787A JPS644069A (en) | 1987-06-26 | 1987-06-26 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS644069A true JPS644069A (en) | 1989-01-09 |
Family
ID=15658424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15783787A Pending JPS644069A (en) | 1987-06-26 | 1987-06-26 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS644069A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0346323A (en) * | 1989-07-14 | 1991-02-27 | Mitsubishi Electric Corp | Manufacture of highly heat-resistant titanium silicide |
| JPH03190124A (en) * | 1989-12-19 | 1991-08-20 | Mitsubishi Electric Corp | Semiconductor device |
| US5955384A (en) * | 1996-01-23 | 1999-09-21 | Nec Corporation | Method of fabricating semiconductor device |
-
1987
- 1987-06-26 JP JP15783787A patent/JPS644069A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0346323A (en) * | 1989-07-14 | 1991-02-27 | Mitsubishi Electric Corp | Manufacture of highly heat-resistant titanium silicide |
| JPH03190124A (en) * | 1989-12-19 | 1991-08-20 | Mitsubishi Electric Corp | Semiconductor device |
| US5955384A (en) * | 1996-01-23 | 1999-09-21 | Nec Corporation | Method of fabricating semiconductor device |
| US5976962A (en) * | 1996-01-23 | 1999-11-02 | Nec Corporation | Method of fabricating semiconductor device |
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