JPS5749286A - Laser device - Google Patents
Laser deviceInfo
- Publication number
- JPS5749286A JPS5749286A JP12452380A JP12452380A JPS5749286A JP S5749286 A JPS5749286 A JP S5749286A JP 12452380 A JP12452380 A JP 12452380A JP 12452380 A JP12452380 A JP 12452380A JP S5749286 A JPS5749286 A JP S5749286A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- produce
- film
- 250mum
- consequence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 2
- 230000010355 oscillation Effects 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 230000005284 excitation Effects 0.000 abstract 1
- 238000005286 illumination Methods 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000008188 pellet Substances 0.000 abstract 1
- 229910052761 rare earth metal Inorganic materials 0.000 abstract 1
- 229910052723 transition metal Inorganic materials 0.000 abstract 1
- 150000003624 transition metals Chemical class 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To produce a laser beam by an apparatus having, as an illumination core of a suitable concentration, a pair of electrode plates formed on two parallel surfaces of an active layer uniformly containing a rare earth element or a transition metal and by using an electroluminescense (EL). CONSTITUTION:An EL laser element is mounted on a copper heat sink 1. The element is formed by preparing a Zn single crystal plate 2 doped with Zn and Al and having a thickness of 250mum and a resistance of 20OMEGAcm, successively forming by spattering a ZnS single crystal film 3 of 500mum thick and containing 1% of Tb and having excessive Zn and a conductive mesa film 5 of In2O3 of 300nm thick, scribing pellets, attaching lead wires 7 and coating the thus formed structure with an Al2O3 film 6. The resonator has a width W of about 250mum and a length L of about 400mum. A D.C. variable power supply 8 is connected between the lead 7 and another read 71 to apply a bias. As the bias voltage is increased, the upper surface of the element starts to produce green light and a laser oscillation takes place as a threshold value is exceeded. The EL laser makes use of a collision excitation of local light emitting core caused by thermal electrons and, hence, suffers only a small influence of grid defect. In consequence, the oscillation can be carried out sufficiently even if there is a slight crystalline defect. In consequence, it is possible to mass produce the laser device at a reduced cost.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12452380A JPS5749286A (en) | 1980-09-10 | 1980-09-10 | Laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12452380A JPS5749286A (en) | 1980-09-10 | 1980-09-10 | Laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5749286A true JPS5749286A (en) | 1982-03-23 |
Family
ID=14887586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12452380A Pending JPS5749286A (en) | 1980-09-10 | 1980-09-10 | Laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5749286A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6390878A (en) * | 1986-10-03 | 1988-04-21 | Komatsu Ltd | Laser device |
| JPS647686A (en) * | 1987-06-30 | 1989-01-11 | Komatsu Mfg Co Ltd | Manufacture of solid-state laser and its manufacture |
| JPS647685A (en) * | 1987-06-30 | 1989-01-11 | Komatsu Mfg Co Ltd | Manufacture of solid-state laser and its manufacture |
| JPH03134992A (en) * | 1989-09-29 | 1991-06-07 | Yu Holding Bvi Inc | Electroluminescence device |
| JP2009530816A (en) * | 2006-03-13 | 2009-08-27 | ザ ユーエイビー リサーチ ファンデーション | Electrically pumped (pumped) widely tunable mid-infrared laser based on quantum confined transition metal doped semiconductor |
-
1980
- 1980-09-10 JP JP12452380A patent/JPS5749286A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6390878A (en) * | 1986-10-03 | 1988-04-21 | Komatsu Ltd | Laser device |
| JPS647686A (en) * | 1987-06-30 | 1989-01-11 | Komatsu Mfg Co Ltd | Manufacture of solid-state laser and its manufacture |
| JPS647685A (en) * | 1987-06-30 | 1989-01-11 | Komatsu Mfg Co Ltd | Manufacture of solid-state laser and its manufacture |
| JPH03134992A (en) * | 1989-09-29 | 1991-06-07 | Yu Holding Bvi Inc | Electroluminescence device |
| JP2009530816A (en) * | 2006-03-13 | 2009-08-27 | ザ ユーエイビー リサーチ ファンデーション | Electrically pumped (pumped) widely tunable mid-infrared laser based on quantum confined transition metal doped semiconductor |
| JP2014131067A (en) * | 2006-03-13 | 2014-07-10 | Uab Research Foundation | Electrically pumped(excited) widely adjustable mid-infrared laser based on quantum confined transition metal doped semiconductor |
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