JPS5752130A - Forming method for electrode - Google Patents

Forming method for electrode

Info

Publication number
JPS5752130A
JPS5752130A JP55127467A JP12746780A JPS5752130A JP S5752130 A JPS5752130 A JP S5752130A JP 55127467 A JP55127467 A JP 55127467A JP 12746780 A JP12746780 A JP 12746780A JP S5752130 A JPS5752130 A JP S5752130A
Authority
JP
Japan
Prior art keywords
electrode
electrode metal
hole
photoresist
contacting hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55127467A
Other languages
Japanese (ja)
Inventor
Atsushi Yoshioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP55127467A priority Critical patent/JPS5752130A/en
Publication of JPS5752130A publication Critical patent/JPS5752130A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To eliminate the occurrence of a disconnection trouble of an electrode metal at the edge of a contacting hole formed at an insulating film by burying in advance the electrode metal in the hole, and then forming a diffused electrode in contact with the electrode metal on the surface of an insulating substrate. CONSTITUTION:A photoresist pattern 12 is formed on an oxidized film 11 on a silicon substrate 10, and a contacting hole 13 is formed at the insulating film 11 by etching. Then, while the photoresist 12 remains, an aluminum film 14 is deposited, and when the photoresist 12 is then removed, only the electrode metal 14 is retained in the contacting hole by lift-off. Further, an aluminum film is deposited, is then patterned, and an electrode 15 connected to the substrate can be formed. Since the electrode 15 is accordingly formed on the electrode metal 15 filled in the contacting hole, it can eliminate the occurrence of a disconnection trouble of the electrode metal 14.
JP55127467A 1980-09-12 1980-09-12 Forming method for electrode Pending JPS5752130A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55127467A JPS5752130A (en) 1980-09-12 1980-09-12 Forming method for electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55127467A JPS5752130A (en) 1980-09-12 1980-09-12 Forming method for electrode

Publications (1)

Publication Number Publication Date
JPS5752130A true JPS5752130A (en) 1982-03-27

Family

ID=14960644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55127467A Pending JPS5752130A (en) 1980-09-12 1980-09-12 Forming method for electrode

Country Status (1)

Country Link
JP (1) JPS5752130A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59140020U (en) * 1983-03-11 1984-09-19 三菱電機株式会社 press mold
JPH01162520A (en) * 1987-11-19 1989-06-27 Feintool Internatl Holding Method and device for bending article

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50140060A (en) * 1974-04-26 1975-11-10
JPS51113478A (en) * 1975-03-28 1976-10-06 Fujitsu Ltd The manufacturing method of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50140060A (en) * 1974-04-26 1975-11-10
JPS51113478A (en) * 1975-03-28 1976-10-06 Fujitsu Ltd The manufacturing method of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59140020U (en) * 1983-03-11 1984-09-19 三菱電機株式会社 press mold
JPH01162520A (en) * 1987-11-19 1989-06-27 Feintool Internatl Holding Method and device for bending article

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