JPS5752174A - Multigate field effect transistor - Google Patents

Multigate field effect transistor

Info

Publication number
JPS5752174A
JPS5752174A JP55128258A JP12825880A JPS5752174A JP S5752174 A JPS5752174 A JP S5752174A JP 55128258 A JP55128258 A JP 55128258A JP 12825880 A JP12825880 A JP 12825880A JP S5752174 A JPS5752174 A JP S5752174A
Authority
JP
Japan
Prior art keywords
gate
thickness
layer
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55128258A
Other languages
Japanese (ja)
Inventor
Yoshito Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55128258A priority Critical patent/JPS5752174A/en
Publication of JPS5752174A publication Critical patent/JPS5752174A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/873—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having multiple gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve the nutual conductance of a multigate field effect transistor having a plurality of gate electrodes on a compound semiconductor layer by reducing the thickness of a semiconductor layer positioned directly under the gate at least one. CONSTITUTION:An N type epitaxial active layer 43 having 1.10<17>cm<-3> of carrier density and approx. 0.3mum of thickness is formed through a buffer layer 42 on a semi-insulating GaAs semiconductor substrate 41 added with Cr. Then, regions 44, 45 are etched on the layer 43 to form stepwise difference, Schottky metal, e.g., aluminum is deposited in the thickness of approx. 5,000Angstrom , is then patterned, and the first and second gates 46, 47 of approx. 1.0mum of gate length are formed. When the thickness of the layer 43 directly under the first gate 46 is formed thinner than that directly under the second gate 47, a bigate field effect transistor having high mutual conductance even if positive bias is not applied to the gate can be obtained.
JP55128258A 1980-09-16 1980-09-16 Multigate field effect transistor Pending JPS5752174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55128258A JPS5752174A (en) 1980-09-16 1980-09-16 Multigate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55128258A JPS5752174A (en) 1980-09-16 1980-09-16 Multigate field effect transistor

Publications (1)

Publication Number Publication Date
JPS5752174A true JPS5752174A (en) 1982-03-27

Family

ID=14980397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55128258A Pending JPS5752174A (en) 1980-09-16 1980-09-16 Multigate field effect transistor

Country Status (1)

Country Link
JP (1) JPS5752174A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139968A (en) * 1989-03-03 1992-08-18 Mitsubishi Denki Kabushiki Kaisha Method of producing a t-shaped gate electrode
EP0585942A1 (en) * 1992-09-03 1994-03-09 Sumitomo Electric Industries, Ltd. Dual gate MESFET
US5449932A (en) * 1993-05-26 1995-09-12 Mitsubishi Denki Kabushiki Kaisha Field effect transistor having gate and source regions in recesses
EP0735593A1 (en) * 1995-03-30 1996-10-02 Murata Manufacturing Co., Ltd. MESFET with recessed gate and method for producing same
US5602501A (en) * 1992-09-03 1997-02-11 Sumitomo Electric Industries, Ltd. Mixer circuit using a dual gate field effect transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036081A (en) * 1973-08-03 1975-04-04
JPS54148385A (en) * 1978-05-12 1979-11-20 Nec Corp High-speed switching field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036081A (en) * 1973-08-03 1975-04-04
JPS54148385A (en) * 1978-05-12 1979-11-20 Nec Corp High-speed switching field effect transistor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139968A (en) * 1989-03-03 1992-08-18 Mitsubishi Denki Kabushiki Kaisha Method of producing a t-shaped gate electrode
EP0585942A1 (en) * 1992-09-03 1994-03-09 Sumitomo Electric Industries, Ltd. Dual gate MESFET
US5389807A (en) * 1992-09-03 1995-02-14 Sumitomo Electric Industries, Ltd. Field effect transistor
US5602501A (en) * 1992-09-03 1997-02-11 Sumitomo Electric Industries, Ltd. Mixer circuit using a dual gate field effect transistor
US5449932A (en) * 1993-05-26 1995-09-12 Mitsubishi Denki Kabushiki Kaisha Field effect transistor having gate and source regions in recesses
EP0735593A1 (en) * 1995-03-30 1996-10-02 Murata Manufacturing Co., Ltd. MESFET with recessed gate and method for producing same

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