JPS575329A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS575329A
JPS575329A JP8001080A JP8001080A JPS575329A JP S575329 A JPS575329 A JP S575329A JP 8001080 A JP8001080 A JP 8001080A JP 8001080 A JP8001080 A JP 8001080A JP S575329 A JPS575329 A JP S575329A
Authority
JP
Japan
Prior art keywords
film
hole
etching
pattern
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8001080A
Other languages
Japanese (ja)
Inventor
Yukihiro Ooyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8001080A priority Critical patent/JPS575329A/en
Publication of JPS575329A publication Critical patent/JPS575329A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To accurately form a hole at an insulating film and a silicate glass film formed on a semiconductor substrate by forming twice photoresist films of the same pattern when forming the hole and etching the films one by one. CONSTITUTION:An insulating film 8 of Si3N4 or the like and a PSG film 9 are sequentially laminated on an Si substrate 1, with the first photoresist as a mask a hole is opened at the film 9 when forming a contact hole thereat, and then the second photoresist of the same pattern is formed, the film 8 is then etched, a polysilicon electrode 10 and an aluminum wire 5C are formed at the hole, and are etched at the prescribed pattern. Thus, it can prevent the undefinite pattern of the PSG film due to sidewise etching and can enhance the selective etching property of polysilicon by reducing the exposed surface of the substrate when etching the wiring pattern.
JP8001080A 1980-06-13 1980-06-13 Manufacture of semiconductor device Pending JPS575329A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8001080A JPS575329A (en) 1980-06-13 1980-06-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8001080A JPS575329A (en) 1980-06-13 1980-06-13 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS575329A true JPS575329A (en) 1982-01-12

Family

ID=13706347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8001080A Pending JPS575329A (en) 1980-06-13 1980-06-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS575329A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6051848U (en) * 1983-09-17 1985-04-11 株式会社明電舎 Switch spring energy storage device
JPS6051847U (en) * 1983-09-17 1985-04-11 株式会社明電舎 Switch spring energy storage device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6051848U (en) * 1983-09-17 1985-04-11 株式会社明電舎 Switch spring energy storage device
JPS6051847U (en) * 1983-09-17 1985-04-11 株式会社明電舎 Switch spring energy storage device

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