JPS575362A - Charge injecting method - Google Patents

Charge injecting method

Info

Publication number
JPS575362A
JPS575362A JP7919580A JP7919580A JPS575362A JP S575362 A JPS575362 A JP S575362A JP 7919580 A JP7919580 A JP 7919580A JP 7919580 A JP7919580 A JP 7919580A JP S575362 A JPS575362 A JP S575362A
Authority
JP
Japan
Prior art keywords
type
substrate
gate electrodes
pulse
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7919580A
Other languages
Japanese (ja)
Other versions
JPS6217879B2 (en
Inventor
Tatsuo Fuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7919580A priority Critical patent/JPS575362A/en
Publication of JPS575362A publication Critical patent/JPS575362A/en
Publication of JPS6217879B2 publication Critical patent/JPS6217879B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To perform the charge injection amount into a double dielectric layer with one type of pulse by connecting in series consecutive gates of double insulating gate type CCD via a voltage drop element, applying a voltage at both ends and injecting charge sequentially increasing thereto. CONSTITUTION:A resistance element 12 is connected between the terminals 11 of various gate electrodes 4 of an MNOS type CCD10, and the terinal 13 is connected via a resistance element 14 to an N type Si substrate 1. When negative voltage pulse 16 is applied between the terminal 15 and the substrate 1, the negative voltage pulse of the magnitude divided by resistors is applied between the respective gate electrodes 4 and the substrate, holes of the quantity corresponding to the applied voltage are injected into an Si3N4/SiO2 layer under the respective gate electrodes 4, and are held. Since the quantity of the holes are sequentially varied and the potential well is sequentially varied in one direction, the unity of the transfer direction in driving the two-phase clock pulse drive can be secured.
JP7919580A 1980-06-12 1980-06-12 Charge injecting method Granted JPS575362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7919580A JPS575362A (en) 1980-06-12 1980-06-12 Charge injecting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7919580A JPS575362A (en) 1980-06-12 1980-06-12 Charge injecting method

Publications (2)

Publication Number Publication Date
JPS575362A true JPS575362A (en) 1982-01-12
JPS6217879B2 JPS6217879B2 (en) 1987-04-20

Family

ID=13683186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7919580A Granted JPS575362A (en) 1980-06-12 1980-06-12 Charge injecting method

Country Status (1)

Country Link
JP (1) JPS575362A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5498161A (en) * 1978-01-19 1979-08-02 Murata Manufacturing Co Filter
WO2003005371A1 (en) * 2001-07-02 2003-01-16 Infineon Technologies Ag Charge coupled eeprom device and corresponding method of operation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5498161A (en) * 1978-01-19 1979-08-02 Murata Manufacturing Co Filter
WO2003005371A1 (en) * 2001-07-02 2003-01-16 Infineon Technologies Ag Charge coupled eeprom device and corresponding method of operation
US7212437B2 (en) 2001-07-02 2007-05-01 Massimo Atti Charge coupled EEPROM device and corresponding method of operation

Also Published As

Publication number Publication date
JPS6217879B2 (en) 1987-04-20

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