JPS575362A - Charge injecting method - Google Patents
Charge injecting methodInfo
- Publication number
- JPS575362A JPS575362A JP7919580A JP7919580A JPS575362A JP S575362 A JPS575362 A JP S575362A JP 7919580 A JP7919580 A JP 7919580A JP 7919580 A JP7919580 A JP 7919580A JP S575362 A JPS575362 A JP S575362A
- Authority
- JP
- Japan
- Prior art keywords
- type
- substrate
- gate electrodes
- pulse
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7919580A JPS575362A (en) | 1980-06-12 | 1980-06-12 | Charge injecting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7919580A JPS575362A (en) | 1980-06-12 | 1980-06-12 | Charge injecting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS575362A true JPS575362A (en) | 1982-01-12 |
| JPS6217879B2 JPS6217879B2 (ja) | 1987-04-20 |
Family
ID=13683186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7919580A Granted JPS575362A (en) | 1980-06-12 | 1980-06-12 | Charge injecting method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS575362A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5498161A (en) * | 1978-01-19 | 1979-08-02 | Murata Manufacturing Co | Filter |
| WO2003005371A1 (en) * | 2001-07-02 | 2003-01-16 | Infineon Technologies Ag | Charge coupled eeprom device and corresponding method of operation |
-
1980
- 1980-06-12 JP JP7919580A patent/JPS575362A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5498161A (en) * | 1978-01-19 | 1979-08-02 | Murata Manufacturing Co | Filter |
| WO2003005371A1 (en) * | 2001-07-02 | 2003-01-16 | Infineon Technologies Ag | Charge coupled eeprom device and corresponding method of operation |
| US7212437B2 (en) | 2001-07-02 | 2007-05-01 | Massimo Atti | Charge coupled EEPROM device and corresponding method of operation |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6217879B2 (ja) | 1987-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4161038A (en) | Complementary metal-ferroelectric semiconductor transistor structure and a matrix of such transistor structure for performing a comparison | |
| JPS54152845A (en) | High dielectric strength mosfet circuit | |
| US3947705A (en) | Method and system for achieving and sampling programmable tap weights in charge coupled devices | |
| KR830008563A (ko) | 2진화된 전기량값들의 순열(順列) 발생용 장치 | |
| JPS57105893A (en) | Charge coupling type quantizing circuit | |
| US4150304A (en) | CCD Comparator | |
| Fu et al. | A distributed gate bistable MOS transistor | |
| GB1512273A (en) | Semiconductor storage devices employing selective charge shift | |
| JPS5757028A (en) | Driving circuit | |
| JPS5275190A (en) | Production of 4-phase drive charge coupling device | |
| JPS574161A (en) | Coupling element for charge | |
| JPS5742163A (en) | Charge transfer device | |
| JPS56116676A (en) | Bias charge forming method for charge-transfer element | |
| JPS5475980A (en) | Switch circuit | |
| JPS5760867A (en) | Tunnel effect load resistance device | |
| SU828377A1 (ru) | Ждущий мультивибратор | |
| JPS56119994A (en) | Driving method of charge-transfer device | |
| JPS5793730A (en) | Signal level conversion circuit | |
| JPS57191067A (en) | Manufacture of electrostatic recording multi-stylus electrode | |
| JPS5477582A (en) | Charge transfer type semiconductor device | |
| JPS5732665A (en) | Complementary type integrated circuit | |
| JPS5498535A (en) | Drive circuit for electrostatic recorder | |
| JPS57127332A (en) | Charge transfer type quantizing device | |
| JPS5453938A (en) | Ccd filter of input coefficient type | |
| JPS57100771A (en) | Switching element |