JPS5754328A - Genatsukisoseichosochi - Google Patents

Genatsukisoseichosochi

Info

Publication number
JPS5754328A
JPS5754328A JP12931180A JP12931180A JPS5754328A JP S5754328 A JPS5754328 A JP S5754328A JP 12931180 A JP12931180 A JP 12931180A JP 12931180 A JP12931180 A JP 12931180A JP S5754328 A JPS5754328 A JP S5754328A
Authority
JP
Japan
Prior art keywords
gas
pipe
substrates
gas pipes
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12931180A
Other languages
English (en)
Inventor
Masao Honda
Kazuhiro Nakao
Hiromitsu Mishimagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12931180A priority Critical patent/JPS5754328A/ja
Publication of JPS5754328A publication Critical patent/JPS5754328A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP12931180A 1980-09-19 1980-09-19 Genatsukisoseichosochi Pending JPS5754328A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12931180A JPS5754328A (ja) 1980-09-19 1980-09-19 Genatsukisoseichosochi

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12931180A JPS5754328A (ja) 1980-09-19 1980-09-19 Genatsukisoseichosochi

Publications (1)

Publication Number Publication Date
JPS5754328A true JPS5754328A (ja) 1982-03-31

Family

ID=15006426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12931180A Pending JPS5754328A (ja) 1980-09-19 1980-09-19 Genatsukisoseichosochi

Country Status (1)

Country Link
JP (1) JPS5754328A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010715A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 化学気相成長装置
JPS62214614A (ja) * 1986-03-17 1987-09-21 Fujitsu Ltd 減圧ｃｖｄ装置
JPS63240032A (ja) * 1987-03-27 1988-10-05 Semiconductor Energy Lab Co Ltd 酸化珪素被膜の高速成膜法
JPS6421917A (en) * 1987-07-16 1989-01-25 Fujitsu Ltd Heating furnace processing method
USRE36328E (en) * 1988-03-31 1999-10-05 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus including temperature control mechanism
EP4060077A3 (en) * 2021-03-16 2022-12-14 Kokusai Electric Corp. Substrate processing apparatus, method of manufacturing semiconductor device and program

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010715A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 化学気相成長装置
JPS62214614A (ja) * 1986-03-17 1987-09-21 Fujitsu Ltd 減圧ｃｖｄ装置
JPS63240032A (ja) * 1987-03-27 1988-10-05 Semiconductor Energy Lab Co Ltd 酸化珪素被膜の高速成膜法
JPS6421917A (en) * 1987-07-16 1989-01-25 Fujitsu Ltd Heating furnace processing method
USRE36328E (en) * 1988-03-31 1999-10-05 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus including temperature control mechanism
EP4060077A3 (en) * 2021-03-16 2022-12-14 Kokusai Electric Corp. Substrate processing apparatus, method of manufacturing semiconductor device and program

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