JPS5758355A - Horizontal type transistor - Google Patents
Horizontal type transistorInfo
- Publication number
- JPS5758355A JPS5758355A JP55131676A JP13167680A JPS5758355A JP S5758355 A JPS5758355 A JP S5758355A JP 55131676 A JP55131676 A JP 55131676A JP 13167680 A JP13167680 A JP 13167680A JP S5758355 A JPS5758355 A JP S5758355A
- Authority
- JP
- Japan
- Prior art keywords
- collector
- emitter
- type
- base
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000010719 annulation reaction Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain approximately twice the circumferential length of an emitter as well as to sharply reduce the base resistance for the subject transistor by a method wherein a concentric annular P type emitter is provided on the inner side of an annular collector and a P type collector is provided inside the P type emitter. CONSTITUTION:An N<+> base connection layer 6, the first P<+> type collector 3, an emitter 7 and the second collector 8 are provided in concentric annulation on the N epitaxial layer on the Si substrate 1, having an N<+> buried layer 5, as prescribed, an aperture is provided on an SiO2 film 9 and an Al electrode 10 is attached. The base resistance of the horizontal type transistor of this constitution can be reduced to the fullest extent by reducing its area to the minimum. Also, when the outside collector CA and the inside collector CB are used independently, the base current does not increase even when the CB is saturated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55131676A JPS5758355A (en) | 1980-09-24 | 1980-09-24 | Horizontal type transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55131676A JPS5758355A (en) | 1980-09-24 | 1980-09-24 | Horizontal type transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5758355A true JPS5758355A (en) | 1982-04-08 |
| JPS6329835B2 JPS6329835B2 (en) | 1988-06-15 |
Family
ID=15063614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55131676A Granted JPS5758355A (en) | 1980-09-24 | 1980-09-24 | Horizontal type transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5758355A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60146353U (en) * | 1984-03-08 | 1985-09-28 | 三洋電機株式会社 | Lateral transistor |
| JPS63238550A (en) * | 1987-03-27 | 1988-10-04 | Terumo Corp | Enzyme sensor |
-
1980
- 1980-09-24 JP JP55131676A patent/JPS5758355A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60146353U (en) * | 1984-03-08 | 1985-09-28 | 三洋電機株式会社 | Lateral transistor |
| JPS63238550A (en) * | 1987-03-27 | 1988-10-04 | Terumo Corp | Enzyme sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6329835B2 (en) | 1988-06-15 |
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