JPS5758377A - Manufacture of high luminescence dot array for light emitting diode - Google Patents
Manufacture of high luminescence dot array for light emitting diodeInfo
- Publication number
- JPS5758377A JPS5758377A JP13233180A JP13233180A JPS5758377A JP S5758377 A JPS5758377 A JP S5758377A JP 13233180 A JP13233180 A JP 13233180A JP 13233180 A JP13233180 A JP 13233180A JP S5758377 A JPS5758377 A JP S5758377A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting elements
- light
- rank
- detecting surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE:To manufacture high luminescence LED dot arrays by a method wherein a dicing technique is used in separating led elements wherein a second dicing process is performed askew to the first dicing direction. CONSTITUTION:Light emitting elements 1a in a rank (a) and light emitting elements 1b in a rank (b) respectively correspond to a dot. The ranks (a) and (b) are located to that the light emitting elements 1a and 1b are arranged zigzag-wise with a distance of, for instance, 125mum. a light detecting surface is moved as indicated by an arrow and some light emitting elements 1a are selectively activated in accordance with a prescribed pattern, with the light emitting elements 1b remaining inactive. The light detecting surface already exposed to light from some light emitting elements 1a moves on and, when it reaches the rank (b), some light emitting elements 1b are selectively activated. Gaps-between dots caused unevenness is thus eliminated and the light detecting surface can be uniformly illuminated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13233180A JPS5758377A (en) | 1980-09-25 | 1980-09-25 | Manufacture of high luminescence dot array for light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13233180A JPS5758377A (en) | 1980-09-25 | 1980-09-25 | Manufacture of high luminescence dot array for light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5758377A true JPS5758377A (en) | 1982-04-08 |
| JPS6158998B2 JPS6158998B2 (en) | 1986-12-13 |
Family
ID=15078819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13233180A Granted JPS5758377A (en) | 1980-09-25 | 1980-09-25 | Manufacture of high luminescence dot array for light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5758377A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6344777A (en) * | 1986-08-11 | 1988-02-25 | Nec Corp | Light emitting diode array chip |
| KR101158073B1 (en) * | 2005-12-13 | 2012-06-22 | 서울옵토디바이스주식회사 | Light emitting device having arrayed cells |
| JP2015111265A (en) * | 2009-05-14 | 2015-06-18 | 4233999 カナダ,インコーポレーテッド | Systems and methods for providing high-resolution images using monolithic arrays of light emitting diodes |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4940891A (en) * | 1972-08-25 | 1974-04-17 | ||
| JPS5322386A (en) * | 1976-08-12 | 1978-03-01 | Sanyo Electric Co Ltd | Polarity identifying method of light emitting diode pellets |
-
1980
- 1980-09-25 JP JP13233180A patent/JPS5758377A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4940891A (en) * | 1972-08-25 | 1974-04-17 | ||
| JPS5322386A (en) * | 1976-08-12 | 1978-03-01 | Sanyo Electric Co Ltd | Polarity identifying method of light emitting diode pellets |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6344777A (en) * | 1986-08-11 | 1988-02-25 | Nec Corp | Light emitting diode array chip |
| KR101158073B1 (en) * | 2005-12-13 | 2012-06-22 | 서울옵토디바이스주식회사 | Light emitting device having arrayed cells |
| JP2015111265A (en) * | 2009-05-14 | 2015-06-18 | 4233999 カナダ,インコーポレーテッド | Systems and methods for providing high-resolution images using monolithic arrays of light emitting diodes |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6158998B2 (en) | 1986-12-13 |
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