JPS575863A - Plasma surface treating apparatus - Google Patents

Plasma surface treating apparatus

Info

Publication number
JPS575863A
JPS575863A JP7905580A JP7905580A JPS575863A JP S575863 A JPS575863 A JP S575863A JP 7905580 A JP7905580 A JP 7905580A JP 7905580 A JP7905580 A JP 7905580A JP S575863 A JPS575863 A JP S575863A
Authority
JP
Japan
Prior art keywords
treated
wall
article
hermetically closed
closed container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7905580A
Other languages
Japanese (ja)
Inventor
Takeshi Yasui
Masahiko Yotsuyanagi
Masahiko Hirose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7905580A priority Critical patent/JPS575863A/en
Publication of JPS575863A publication Critical patent/JPS575863A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)

Abstract

PURPOSE:To provide the titled apparatus having no polymer adhesion to a hermetically closed container and making a working enviroment sanitary comprising the formation of the hermetically closed container for carrying out surface treatment of an article to be treated contained therein by using plasma or ion from a multilayered wall structure as well as making a space between walls hollow. CONSTITUTION:The plasma surface treating apparatus consists of a microwave generating source 1, a wave guide tube 2, a plunger 3, three stub tuners 4, a hermetically closed container 5, a gas discharge port 6 and a gas introducing port 7 or the like. Then, said container 5 has a double wall structure and, into a hollow part between an inner wall 5' and an outer wall 5'', for example, a heating means such as an electric heating wire or the like can be inserted and, when an article to be treated is subjected to nitriding treatment or the like, harmful moisture adhered to the inner wall 5' can be forcedly removed by heating. Further, a cooling pipe 20 is arranged to the outer wall 5'' to cool the container. When an article to be treated is treated by said treating apparatus, even if oils or the like are adhered to a surface or an interior of said article to be treated, a polymer formed according to the conventional process is not adhered to the hermetically closed container and a working enviroment is improved as well as made sanitary and, further, it is not necessary to disassemble said apparatus to wash the same.
JP7905580A 1980-06-13 1980-06-13 Plasma surface treating apparatus Pending JPS575863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7905580A JPS575863A (en) 1980-06-13 1980-06-13 Plasma surface treating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7905580A JPS575863A (en) 1980-06-13 1980-06-13 Plasma surface treating apparatus

Publications (1)

Publication Number Publication Date
JPS575863A true JPS575863A (en) 1982-01-12

Family

ID=13679203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7905580A Pending JPS575863A (en) 1980-06-13 1980-06-13 Plasma surface treating apparatus

Country Status (1)

Country Link
JP (1) JPS575863A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5451259A (en) * 1994-02-17 1995-09-19 Krogh; Ole D. ECR plasma source for remote processing
US5453125A (en) * 1994-02-17 1995-09-26 Krogh; Ole D. ECR plasma source for gas abatement
WO1996013621A1 (en) * 1994-10-31 1996-05-09 Krogh Ole D An ecr plasma source

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5451259A (en) * 1994-02-17 1995-09-19 Krogh; Ole D. ECR plasma source for remote processing
US5453125A (en) * 1994-02-17 1995-09-26 Krogh; Ole D. ECR plasma source for gas abatement
WO1996013621A1 (en) * 1994-10-31 1996-05-09 Krogh Ole D An ecr plasma source

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