JPS5763852A - Hybrid integrated circuit - Google Patents

Hybrid integrated circuit

Info

Publication number
JPS5763852A
JPS5763852A JP55138801A JP13880180A JPS5763852A JP S5763852 A JPS5763852 A JP S5763852A JP 55138801 A JP55138801 A JP 55138801A JP 13880180 A JP13880180 A JP 13880180A JP S5763852 A JPS5763852 A JP S5763852A
Authority
JP
Japan
Prior art keywords
resistor
leaf
thick
integrated circuit
base plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55138801A
Other languages
Japanese (ja)
Other versions
JPH0140516B2 (en
Inventor
Hiroshi Otsu
Hiromi Isomae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55138801A priority Critical patent/JPS5763852A/en
Publication of JPS5763852A publication Critical patent/JPS5763852A/en
Publication of JPH0140516B2 publication Critical patent/JPH0140516B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistors, capacitors or inductors

Landscapes

  • Parts Printed On Printed Circuit Boards (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

PURPOSE:To improve the yield rate of a circuit by adopting a metal-leaf resistor for a resistor demanding high precision and by adopting a thick-film resistor for a part demanding no high precision, in the hybrid integrated circuit containing the resistors. CONSTITUTION:A Pd-Ag conductor pattern 3 is formed by printing and baking on a ceramic base plate 2 made of alumina or the like, and an RuO2 thick-film resistor 4 is formed by the same method. The thick-film resistor 4 is trimmed as occasion calls. On the other part of the ceramic base plate 2 is providied the metal-leaf resistor 5, which is connected to a thick-film conductor pattern 6 by a conductor 7 for connection. The metal-leaf resistor 5 is composed of a patterns 11 and 12 consisting of specific-alloy leaf whose main constitutent is NiCr. By cutting the zigzag part of the pattern 12 sequentially, a resistance value can be trimmed. A semiconductor chip 8 is mounted on the ceramic base plate 2, a leaf terminal is connected thereto, and thereby the hybrid integrated circuit is completed.
JP55138801A 1980-10-06 1980-10-06 Hybrid integrated circuit Granted JPS5763852A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55138801A JPS5763852A (en) 1980-10-06 1980-10-06 Hybrid integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55138801A JPS5763852A (en) 1980-10-06 1980-10-06 Hybrid integrated circuit

Publications (2)

Publication Number Publication Date
JPS5763852A true JPS5763852A (en) 1982-04-17
JPH0140516B2 JPH0140516B2 (en) 1989-08-29

Family

ID=15230543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55138801A Granted JPS5763852A (en) 1980-10-06 1980-10-06 Hybrid integrated circuit

Country Status (1)

Country Link
JP (1) JPS5763852A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03113154U (en) * 1990-03-02 1991-11-19
US7408437B2 (en) 2004-05-18 2008-08-05 Ngk Spark Plug Co., Ltd. Resistance element, its precursor, and resistance value adjusting method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03113154U (en) * 1990-03-02 1991-11-19
US7408437B2 (en) 2004-05-18 2008-08-05 Ngk Spark Plug Co., Ltd. Resistance element, its precursor, and resistance value adjusting method

Also Published As

Publication number Publication date
JPH0140516B2 (en) 1989-08-29

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