JPS577116A - Manufacture of amorphous silicon thin film - Google Patents

Manufacture of amorphous silicon thin film

Info

Publication number
JPS577116A
JPS577116A JP8192980A JP8192980A JPS577116A JP S577116 A JPS577116 A JP S577116A JP 8192980 A JP8192980 A JP 8192980A JP 8192980 A JP8192980 A JP 8192980A JP S577116 A JPS577116 A JP S577116A
Authority
JP
Japan
Prior art keywords
thin film
substrate
depositing
container
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8192980A
Other languages
English (en)
Inventor
Takashi Suzuki
Koichi Shinohara
Yasuo Iijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8192980A priority Critical patent/JPS577116A/ja
Publication of JPS577116A publication Critical patent/JPS577116A/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901Materials
    • H10P14/2921Materials being crystalline insulating materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3402Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411Silicon, silicon germanium or germanium
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
JP8192980A 1980-06-16 1980-06-16 Manufacture of amorphous silicon thin film Pending JPS577116A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8192980A JPS577116A (en) 1980-06-16 1980-06-16 Manufacture of amorphous silicon thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8192980A JPS577116A (en) 1980-06-16 1980-06-16 Manufacture of amorphous silicon thin film

Publications (1)

Publication Number Publication Date
JPS577116A true JPS577116A (en) 1982-01-14

Family

ID=13760149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8192980A Pending JPS577116A (en) 1980-06-16 1980-06-16 Manufacture of amorphous silicon thin film

Country Status (1)

Country Link
JP (1) JPS577116A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5996718A (ja) * 1982-11-25 1984-06-04 Sekisui Chem Co Ltd 薄膜半導体の製造方法
JPS5996721A (ja) * 1982-11-25 1984-06-04 Sekisui Chem Co Ltd 薄膜半導体の製造方法
JPS59102896A (ja) * 1982-11-30 1984-06-14 Toshiba Corp 単結晶の形状制御方法
CN106257156A (zh) * 2015-06-19 2016-12-28 江苏正能电子科技有限公司 一种可均匀加热太阳能硅电池浆料的容器

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5996718A (ja) * 1982-11-25 1984-06-04 Sekisui Chem Co Ltd 薄膜半導体の製造方法
JPS5996721A (ja) * 1982-11-25 1984-06-04 Sekisui Chem Co Ltd 薄膜半導体の製造方法
JPS59102896A (ja) * 1982-11-30 1984-06-14 Toshiba Corp 単結晶の形状制御方法
CN106257156A (zh) * 2015-06-19 2016-12-28 江苏正能电子科技有限公司 一种可均匀加热太阳能硅电池浆料的容器

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