JPS577116A - Manufacture of amorphous silicon thin film - Google Patents
Manufacture of amorphous silicon thin filmInfo
- Publication number
- JPS577116A JPS577116A JP8192980A JP8192980A JPS577116A JP S577116 A JPS577116 A JP S577116A JP 8192980 A JP8192980 A JP 8192980A JP 8192980 A JP8192980 A JP 8192980A JP S577116 A JPS577116 A JP S577116A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- depositing
- container
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2921—Materials being crystalline insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8192980A JPS577116A (en) | 1980-06-16 | 1980-06-16 | Manufacture of amorphous silicon thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8192980A JPS577116A (en) | 1980-06-16 | 1980-06-16 | Manufacture of amorphous silicon thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS577116A true JPS577116A (en) | 1982-01-14 |
Family
ID=13760149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8192980A Pending JPS577116A (en) | 1980-06-16 | 1980-06-16 | Manufacture of amorphous silicon thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS577116A (ja) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5996718A (ja) * | 1982-11-25 | 1984-06-04 | Sekisui Chem Co Ltd | 薄膜半導体の製造方法 |
| JPS5996721A (ja) * | 1982-11-25 | 1984-06-04 | Sekisui Chem Co Ltd | 薄膜半導体の製造方法 |
| JPS59102896A (ja) * | 1982-11-30 | 1984-06-14 | Toshiba Corp | 単結晶の形状制御方法 |
| CN106257156A (zh) * | 2015-06-19 | 2016-12-28 | 江苏正能电子科技有限公司 | 一种可均匀加热太阳能硅电池浆料的容器 |
-
1980
- 1980-06-16 JP JP8192980A patent/JPS577116A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5996718A (ja) * | 1982-11-25 | 1984-06-04 | Sekisui Chem Co Ltd | 薄膜半導体の製造方法 |
| JPS5996721A (ja) * | 1982-11-25 | 1984-06-04 | Sekisui Chem Co Ltd | 薄膜半導体の製造方法 |
| JPS59102896A (ja) * | 1982-11-30 | 1984-06-14 | Toshiba Corp | 単結晶の形状制御方法 |
| CN106257156A (zh) * | 2015-06-19 | 2016-12-28 | 江苏正能电子科技有限公司 | 一种可均匀加热太阳能硅电池浆料的容器 |
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