JPS5771183A - Junction-type field effect transistor - Google Patents
Junction-type field effect transistorInfo
- Publication number
- JPS5771183A JPS5771183A JP55147832A JP14783280A JPS5771183A JP S5771183 A JPS5771183 A JP S5771183A JP 55147832 A JP55147832 A JP 55147832A JP 14783280 A JP14783280 A JP 14783280A JP S5771183 A JPS5771183 A JP S5771183A
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- type
- drain
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To make an effective channel length shorter than a conventinal processing limitation and improve high-frequency characteristics, by providing a gate buried region located under a gate region not very underneath the gate but opposite the side end of the gate region. CONSTITUTION:An N<+> type drain buried region 21 and a P<+> type gate buried region 20 are formed by diffusion on a P type Si substrate 11. An N type layer 12 is grown epitaxially on the whole surface including both. Next, a P<+> type gate region 1 is formed by diffusion at the center of a layer 15. An N<+> type drain electrode lead region 14 and an N<+> type source lead region 15 are provided on both sides of it. Next, an SiO2 film 16 covers the whole surface. Gate, drain and source electrode 17, 18 and 19 are mounted to openings bored for the regions 13, 14 and 15 respectively. In this constitution, the region 20 is shifted to the region 21 in opposite direction so that the side end of the gate buried region 20 confronts that of the gate region 13. The effective channel length L is shortened between source and drain substantially.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55147832A JPS5771183A (en) | 1980-10-22 | 1980-10-22 | Junction-type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55147832A JPS5771183A (en) | 1980-10-22 | 1980-10-22 | Junction-type field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5771183A true JPS5771183A (en) | 1982-05-01 |
Family
ID=15439247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55147832A Pending JPS5771183A (en) | 1980-10-22 | 1980-10-22 | Junction-type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5771183A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62196359U (en) * | 1986-06-05 | 1987-12-14 | ||
| JP4854804B1 (en) * | 2010-10-26 | 2012-01-18 | 三井造船株式会社 | Construction method for tower-like structure pillars |
| CN103956385A (en) * | 2014-04-30 | 2014-07-30 | 电子科技大学 | JFET device and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52100878A (en) * | 1976-02-19 | 1977-08-24 | Sony Corp | Field effect transistor |
-
1980
- 1980-10-22 JP JP55147832A patent/JPS5771183A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52100878A (en) * | 1976-02-19 | 1977-08-24 | Sony Corp | Field effect transistor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62196359U (en) * | 1986-06-05 | 1987-12-14 | ||
| JP4854804B1 (en) * | 2010-10-26 | 2012-01-18 | 三井造船株式会社 | Construction method for tower-like structure pillars |
| CN103956385A (en) * | 2014-04-30 | 2014-07-30 | 电子科技大学 | JFET device and manufacturing method thereof |
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