JPS577163A - Junction field effect transistor - Google Patents

Junction field effect transistor

Info

Publication number
JPS577163A
JPS577163A JP8014280A JP8014280A JPS577163A JP S577163 A JPS577163 A JP S577163A JP 8014280 A JP8014280 A JP 8014280A JP 8014280 A JP8014280 A JP 8014280A JP S577163 A JPS577163 A JP S577163A
Authority
JP
Japan
Prior art keywords
gate
drain
source
screen
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8014280A
Other languages
Japanese (ja)
Inventor
Toshio Shino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8014280A priority Critical patent/JPS577163A/en
Publication of JPS577163A publication Critical patent/JPS577163A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a high-performance junction FET by a method wherein, when an N type channel has a source on the surface and a drain on the back, a P type gate is distributed in the shape of a screen on the source side and the drain side of the channel. CONSTITUTION:A P<+> gate distributed in the shape of a screen in such a way that each surrounds a P<+> source 15 is formed and a P<+> gate 18 in the shape of a screen is buried on the side near an N<+> drain 11 of an N type channel 12 corresponding to the gate 14, while the P<+> layer 18 located outside an active region is led to the surface of the substrate via a deep P<+> diffused layer 19 and connected to a gate electrode 20. Since the gate 18 screens the gate 14 and the drain 11 electrostatically in this way, feedback is reduced while the gain is increased when used with source being grounded. Thus, the device stably operates without oscillation, by far enlarging the range of stabilized operation.
JP8014280A 1980-06-16 1980-06-16 Junction field effect transistor Pending JPS577163A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8014280A JPS577163A (en) 1980-06-16 1980-06-16 Junction field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8014280A JPS577163A (en) 1980-06-16 1980-06-16 Junction field effect transistor

Publications (1)

Publication Number Publication Date
JPS577163A true JPS577163A (en) 1982-01-14

Family

ID=13710007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8014280A Pending JPS577163A (en) 1980-06-16 1980-06-16 Junction field effect transistor

Country Status (1)

Country Link
JP (1) JPS577163A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60223169A (en) * 1984-04-19 1985-11-07 Matsushita Electric Ind Co Ltd Static induction transistor
JPS61168967A (en) * 1985-01-22 1986-07-30 Matsushita Electric Ind Co Ltd semiconductor equipment
US4962410A (en) * 1989-08-04 1990-10-09 Arizona Board Of Regents QUADFET-A novel field effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60223169A (en) * 1984-04-19 1985-11-07 Matsushita Electric Ind Co Ltd Static induction transistor
JPS61168967A (en) * 1985-01-22 1986-07-30 Matsushita Electric Ind Co Ltd semiconductor equipment
US4962410A (en) * 1989-08-04 1990-10-09 Arizona Board Of Regents QUADFET-A novel field effect transistor

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