JPS577118A - Manufacture of 3-5 group mixed crystal single crystal - Google Patents

Manufacture of 3-5 group mixed crystal single crystal

Info

Publication number
JPS577118A
JPS577118A JP8189080A JP8189080A JPS577118A JP S577118 A JPS577118 A JP S577118A JP 8189080 A JP8189080 A JP 8189080A JP 8189080 A JP8189080 A JP 8189080A JP S577118 A JPS577118 A JP S577118A
Authority
JP
Japan
Prior art keywords
substrate
crystal
growing
single crystal
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8189080A
Other languages
English (en)
Other versions
JPH0131290B2 (ja
Inventor
Junkichi Nakagawa
Toshiya Toyoshima
Seiji Mizuniwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP8189080A priority Critical patent/JPS577118A/ja
Publication of JPS577118A publication Critical patent/JPS577118A/ja
Publication of JPH0131290B2 publication Critical patent/JPH0131290B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
JP8189080A 1980-06-17 1980-06-17 Manufacture of 3-5 group mixed crystal single crystal Granted JPS577118A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8189080A JPS577118A (en) 1980-06-17 1980-06-17 Manufacture of 3-5 group mixed crystal single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8189080A JPS577118A (en) 1980-06-17 1980-06-17 Manufacture of 3-5 group mixed crystal single crystal

Publications (2)

Publication Number Publication Date
JPS577118A true JPS577118A (en) 1982-01-14
JPH0131290B2 JPH0131290B2 (ja) 1989-06-26

Family

ID=13759032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8189080A Granted JPS577118A (en) 1980-06-17 1980-06-17 Manufacture of 3-5 group mixed crystal single crystal

Country Status (1)

Country Link
JP (1) JPS577118A (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123591A (en) * 1975-04-09 1976-10-28 Milnes Arthur Method of producing solar battery semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123591A (en) * 1975-04-09 1976-10-28 Milnes Arthur Method of producing solar battery semiconductor

Also Published As

Publication number Publication date
JPH0131290B2 (ja) 1989-06-26

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