JPS5478377A - Method and apparatus for growing semiconductor crystal - Google Patents

Method and apparatus for growing semiconductor crystal

Info

Publication number
JPS5478377A
JPS5478377A JP14625677A JP14625677A JPS5478377A JP S5478377 A JPS5478377 A JP S5478377A JP 14625677 A JP14625677 A JP 14625677A JP 14625677 A JP14625677 A JP 14625677A JP S5478377 A JPS5478377 A JP S5478377A
Authority
JP
Japan
Prior art keywords
liq
molten
substrate
crystal
bath
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14625677A
Other languages
Japanese (ja)
Other versions
JPS5620688B2 (en
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14625677A priority Critical patent/JPS5478377A/en
Publication of JPS5478377A publication Critical patent/JPS5478377A/en
Publication of JPS5620688B2 publication Critical patent/JPS5620688B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To grow semiconductor crystal of high purity on a substrate in order, by making a substrate crystal contact with plural mother molten liq., then with plural thin layer molten liq. of the same composition in turn, hereby preventing mixing of the molten liq.
CONSTITUTION: For a substrate crystal 3 is used, e.g., GaAs crystal doped with Si. Then GaAs crystals 21W24 which are not doped are held in growing-boats and are inserted into a reaction tube. In that case, bath tanks 16W19 made by bath-tank plate 2 are made to coincide with molten-liq.-separating spaces 12W15 made by molten-liq.-separating plate 8. After growing-boat is heated, the bath-tank plate 2 is moved in the direction of an arrow in order to separate a portion of mother molten liq. 4W9 in molten-liq.-separating spaces 12W15 so as to prepare thin layers 25W28, which are made to contact with crystals 21W24 in order to maintain the composition constant. Then while being cooled, substrate-crystal-support plate 1 is moved in the direction of an arrow and the substrate is stopped under the thin layers 25W28 so as to deposit 4 layers on the substrate 3 epitaxially.
COPYRIGHT: (C)1979,JPO&Japio
JP14625677A 1977-12-05 1977-12-05 Method and apparatus for growing semiconductor crystal Granted JPS5478377A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14625677A JPS5478377A (en) 1977-12-05 1977-12-05 Method and apparatus for growing semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14625677A JPS5478377A (en) 1977-12-05 1977-12-05 Method and apparatus for growing semiconductor crystal

Publications (2)

Publication Number Publication Date
JPS5478377A true JPS5478377A (en) 1979-06-22
JPS5620688B2 JPS5620688B2 (en) 1981-05-15

Family

ID=15403616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14625677A Granted JPS5478377A (en) 1977-12-05 1977-12-05 Method and apparatus for growing semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS5478377A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59101823A (en) * 1982-12-03 1984-06-12 Nec Corp Liquid-phase epitaxial growth device
CN111962146A (en) * 2020-09-15 2020-11-20 北京智创芯源科技有限公司 Horizontal liquid phase epitaxial graphite boat, growth system, epitaxial method and growth method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4934275A (en) * 1972-07-28 1974-03-29
JPS51139774A (en) * 1975-05-28 1976-12-02 Sony Corp Liquid phase growing device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4934275A (en) * 1972-07-28 1974-03-29
JPS51139774A (en) * 1975-05-28 1976-12-02 Sony Corp Liquid phase growing device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59101823A (en) * 1982-12-03 1984-06-12 Nec Corp Liquid-phase epitaxial growth device
CN111962146A (en) * 2020-09-15 2020-11-20 北京智创芯源科技有限公司 Horizontal liquid phase epitaxial graphite boat, growth system, epitaxial method and growth method

Also Published As

Publication number Publication date
JPS5620688B2 (en) 1981-05-15

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