JPS577126A - Manufacture of compound semiconductor device - Google Patents

Manufacture of compound semiconductor device

Info

Publication number
JPS577126A
JPS577126A JP8193680A JP8193680A JPS577126A JP S577126 A JPS577126 A JP S577126A JP 8193680 A JP8193680 A JP 8193680A JP 8193680 A JP8193680 A JP 8193680A JP S577126 A JPS577126 A JP S577126A
Authority
JP
Japan
Prior art keywords
electrode
cleaning
water soluble
organic solvent
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8193680A
Other languages
Japanese (ja)
Inventor
Masahiro Hagio
Shutaro Nanbu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8193680A priority Critical patent/JPS577126A/en
Publication of JPS577126A publication Critical patent/JPS577126A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To prevent the deterioration of the initial characteristics of, for example, a GaAs Schottky gate FET by etching a metallic layer formed on a thin active layer to form an electrode structure, then cleaning it with water soluble organic solvent. CONSTITUTION:In a step of forming the electrode of, for example, GaAsFET, a Schottky gate electrode 3 is etched and formed, and water soluble organic solvent, e.g., methyl alcohol, ethyl alcohol, acetone, etc. is used in the step of cleaning and removing the etchant. Since these organic solvents do not oxidize the GaAs, a oxidized region 4 is not formed in the active layer 2 in the periphery of the electrode 3. Even if the thickness t of the layer 2 is formed less than 0.5mum in the element, the cleaning step can be carried out without deteriorating the characteristics, e.g. power gain, noise index, etc.
JP8193680A 1980-06-16 1980-06-16 Manufacture of compound semiconductor device Pending JPS577126A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8193680A JPS577126A (en) 1980-06-16 1980-06-16 Manufacture of compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8193680A JPS577126A (en) 1980-06-16 1980-06-16 Manufacture of compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS577126A true JPS577126A (en) 1982-01-14

Family

ID=13760364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8193680A Pending JPS577126A (en) 1980-06-16 1980-06-16 Manufacture of compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS577126A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210830A (en) * 1989-02-10 1990-08-22 Matsushita Electric Ind Co Ltd Surface treatment method of gaas substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4727494U (en) * 1971-04-16 1972-11-28

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4727494U (en) * 1971-04-16 1972-11-28

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210830A (en) * 1989-02-10 1990-08-22 Matsushita Electric Ind Co Ltd Surface treatment method of gaas substrate

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