JPS577182A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS577182A JPS577182A JP8118580A JP8118580A JPS577182A JP S577182 A JPS577182 A JP S577182A JP 8118580 A JP8118580 A JP 8118580A JP 8118580 A JP8118580 A JP 8118580A JP S577182 A JPS577182 A JP S577182A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type inp
- transverse mode
- active layer
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 238000003776 cleavage reaction Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 230000000737 periodic effect Effects 0.000 abstract 1
- 230000001902 propagating effect Effects 0.000 abstract 1
- 230000007017 scission Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8118580A JPS577182A (en) | 1980-06-16 | 1980-06-16 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8118580A JPS577182A (en) | 1980-06-16 | 1980-06-16 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS577182A true JPS577182A (en) | 1982-01-14 |
Family
ID=13739404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8118580A Pending JPS577182A (en) | 1980-06-16 | 1980-06-16 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS577182A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59151483A (ja) * | 1983-02-18 | 1984-08-29 | Agency Of Ind Science & Technol | 半導体レ−ザ装置 |
| JPS59152682A (ja) * | 1983-02-21 | 1984-08-31 | Nippon Telegr & Teleph Corp <Ntt> | 分布反射形半導体レ−ザ |
-
1980
- 1980-06-16 JP JP8118580A patent/JPS577182A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59151483A (ja) * | 1983-02-18 | 1984-08-29 | Agency Of Ind Science & Technol | 半導体レ−ザ装置 |
| JPS59152682A (ja) * | 1983-02-21 | 1984-08-31 | Nippon Telegr & Teleph Corp <Ntt> | 分布反射形半導体レ−ザ |
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