JPS5772332A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5772332A
JPS5772332A JP55148598A JP14859880A JPS5772332A JP S5772332 A JPS5772332 A JP S5772332A JP 55148598 A JP55148598 A JP 55148598A JP 14859880 A JP14859880 A JP 14859880A JP S5772332 A JPS5772332 A JP S5772332A
Authority
JP
Japan
Prior art keywords
silicon dioxide
layer
etching
silicon
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55148598A
Other languages
Japanese (ja)
Inventor
Masao Kanazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55148598A priority Critical patent/JPS5772332A/en
Publication of JPS5772332A publication Critical patent/JPS5772332A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent an overhang from being produced at an end part of polycrystalline silicon by a method wherein a silicon dioxide layer deposited on a silicon dioxide layer is removed, only the upper face of silicon dioxide is removed by means of active ion etching while allowing the side surface thereof to be left, and after that, silicon dioxide etching that is a pretreatment is performed. CONSTITUTION:Silicon dioxide 1,3 and polycrystalline silicon 2 are oxidized once, and polycrystalline silicon layer 6,6' are formed, and with the application of reactive ion etching, the layer 6' is removed, and the layer 6 remains. After that, etching for silicon dioxide as the next process is performed. Thereby, overhang of the silicon dioxide layer is prevented.
JP55148598A 1980-10-23 1980-10-23 Manufacture of semiconductor device Pending JPS5772332A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148598A JPS5772332A (en) 1980-10-23 1980-10-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148598A JPS5772332A (en) 1980-10-23 1980-10-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5772332A true JPS5772332A (en) 1982-05-06

Family

ID=15456334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148598A Pending JPS5772332A (en) 1980-10-23 1980-10-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5772332A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444478A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device
JPS54151374A (en) * 1978-04-14 1979-11-28 Toshiba Corp Manufacture for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444478A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device
JPS54151374A (en) * 1978-04-14 1979-11-28 Toshiba Corp Manufacture for semiconductor device

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