JPS5772345A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5772345A
JPS5772345A JP55148399A JP14839980A JPS5772345A JP S5772345 A JPS5772345 A JP S5772345A JP 55148399 A JP55148399 A JP 55148399A JP 14839980 A JP14839980 A JP 14839980A JP S5772345 A JPS5772345 A JP S5772345A
Authority
JP
Japan
Prior art keywords
layer
impurity concentration
adjoins
ohmic contact
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55148399A
Other languages
Japanese (ja)
Other versions
JPH0214781B2 (en
Inventor
Toshikatsu Shirasawa
Shigeru Takahashi
Kiyoshi Tsukuda
Yoshikazu Hosokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55148399A priority Critical patent/JPS5772345A/en
Publication of JPS5772345A publication Critical patent/JPS5772345A/en
Publication of JPH0214781B2 publication Critical patent/JPH0214781B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment

Landscapes

  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To integrate a high pressure resistance circuit element and a low resistance circuit element simultaneously, by providing a high impurity concentration layer, which adjoins a dielectric film, and a medium impurity concentration semiconductor layer between the layer and an adjoining semiconductor layer. CONSTITUTION:Between a high impurity concentration layer n<+>, which adjoins a dielectric film, and a semiconductor layer nB or nC, which adjoins the layer n<+>, a semiconductor layer n, whose impurity concentration is medium between those of the two layers, is formed. In an island region 11, a wiring 20 makes ohmic contact with the layer n and wirings 17-19 do not make ohmic contact, and therefore, the layer n becomes a field alleviating layer and the layer n<+> functions as a channel stopper. In an island region 12, a wiring 23 of a collector terminal makes ohmic contact with the layer n, and current passes to the layer n<+>, the layer n and the layer nC. The layer nC is made thinner by thickness of the layer n, and specific resistance of the layer n is lower, and therefore, saturation resistance of a transistor made in the region 12 is reduced.
JP55148399A 1980-10-24 1980-10-24 Semiconductor integrated circuit Granted JPS5772345A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148399A JPS5772345A (en) 1980-10-24 1980-10-24 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148399A JPS5772345A (en) 1980-10-24 1980-10-24 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5772345A true JPS5772345A (en) 1982-05-06
JPH0214781B2 JPH0214781B2 (en) 1990-04-10

Family

ID=15451908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148399A Granted JPS5772345A (en) 1980-10-24 1980-10-24 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5772345A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007201202A (en) * 2006-01-26 2007-08-09 Toyota Central Res & Dev Lab Inc Semiconductor device for electrostatic protection

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0397880U (en) * 1990-01-26 1991-10-09

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007201202A (en) * 2006-01-26 2007-08-09 Toyota Central Res & Dev Lab Inc Semiconductor device for electrostatic protection

Also Published As

Publication number Publication date
JPH0214781B2 (en) 1990-04-10

Similar Documents

Publication Publication Date Title
JPS5690555A (en) Semiconductor integrated circuit
JPS57141962A (en) Semiconductor integrated circuit device
GB959667A (en) Improvements in or relating to methods of manufacturing unitary solid state electronic circuit complexes and to said complexes
US3821776A (en) Diffusion self aligned mosfet with pinch off isolation
JPS57208177A (en) Semiconductor negative resistance element
JPS5772345A (en) Semiconductor integrated circuit
JPS5753944A (en) Semiconductor integrated circuit
US3623217A (en) Method of manufacturing a field effect semiconductor device
JPS5734363A (en) Semiconductor device
JPS54156483A (en) Non-volatile semiconductor memory device
JPS56125875A (en) Semiconductor integrated circuit device
JPS5710247A (en) Semiconductor device
JPS54148388A (en) Semiconductor integrated circuit device
JPS5615075A (en) Semiconductor device
JPS57157539A (en) Semiconductor integrated circuit device
JPS6425480A (en) Mos type semiconductor device
JPS55125648A (en) Semiconductor integrated circuit
JPS57132352A (en) Complementary type metal oxide semiconductor integrated circuit device
JPS5612777A (en) Vertical type field effect semiconductor device and manufacture therefor
JPS56133845A (en) Semiconductor device
JPS56147467A (en) Cmos semiconductor device and manufacture thereof
JPS5734368A (en) Protective diode for insulated gate field-effect transistor
JPS56147469A (en) Semiconductor device
JPS57145375A (en) Mis type semiconductor integrated circuit device
JPS57145359A (en) Semiconductor integrated circuit