JPS6425480A - Mos type semiconductor device - Google Patents
Mos type semiconductor deviceInfo
- Publication number
- JPS6425480A JPS6425480A JP62181508A JP18150887A JPS6425480A JP S6425480 A JPS6425480 A JP S6425480A JP 62181508 A JP62181508 A JP 62181508A JP 18150887 A JP18150887 A JP 18150887A JP S6425480 A JPS6425480 A JP S6425480A
- Authority
- JP
- Japan
- Prior art keywords
- ldd structure
- layer
- oxide film
- thin
- gate oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To solve the deteriorations in an operation and reliability upon miniaturization of a MOS type semiconductor device and to reduce a deterioration mode intrinsic for an LDD structure by providing a sidewall gate electrode through a thin gate oxide film on the top of a low concentration diffused layer. CONSTITUTION:Sidewall gate electrodes 10, 11 are formed through thin gate oxide films 8, 9 on the tops of low concentration diffused layers 4, 5 of an LDD structure. Thus, the capacities of the films 8, 9 become larger than that of a gate oxide film 6 on the top of a channel, and parasitic resistances generated at the layers 4, 5 are reduced. Further, since the film 8 on the top of the layer 4 is thin, a point of inverting the direction of a surface electric field generated on the substrate surface of the layer 4 is disposed extremely toward a drain diffused layer 2 as compared with the LDD structure having a reverse T gate in a conventional LDD structure under bias condition that the implantation of hot carrier to the oxide film becomes maximum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62181508A JPS6425480A (en) | 1987-07-21 | 1987-07-21 | Mos type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62181508A JPS6425480A (en) | 1987-07-21 | 1987-07-21 | Mos type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6425480A true JPS6425480A (en) | 1989-01-27 |
Family
ID=16101988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62181508A Pending JPS6425480A (en) | 1987-07-21 | 1987-07-21 | Mos type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6425480A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100393216B1 (en) * | 2001-02-19 | 2003-07-31 | 삼성전자주식회사 | Method of fabricating Metal Oxide Semiconductor transistor with Lightly Doped Drain structure |
| WO2004107811A1 (en) | 2003-06-02 | 2004-12-09 | Yamaha Corporation | Array speaker system |
-
1987
- 1987-07-21 JP JP62181508A patent/JPS6425480A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100393216B1 (en) * | 2001-02-19 | 2003-07-31 | 삼성전자주식회사 | Method of fabricating Metal Oxide Semiconductor transistor with Lightly Doped Drain structure |
| WO2004107811A1 (en) | 2003-06-02 | 2004-12-09 | Yamaha Corporation | Array speaker system |
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