JPS5772376A - Protective circuit device for semiconductor - Google Patents

Protective circuit device for semiconductor

Info

Publication number
JPS5772376A
JPS5772376A JP55148332A JP14833280A JPS5772376A JP S5772376 A JPS5772376 A JP S5772376A JP 55148332 A JP55148332 A JP 55148332A JP 14833280 A JP14833280 A JP 14833280A JP S5772376 A JPS5772376 A JP S5772376A
Authority
JP
Japan
Prior art keywords
diffusion resistor
diode
resistor
semiconductor
latch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55148332A
Other languages
Japanese (ja)
Inventor
Akira Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55148332A priority Critical patent/JPS5772376A/en
Publication of JPS5772376A publication Critical patent/JPS5772376A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To prevent electrostatic breakdown and latch-up by forming a diffusion resistor and surrounding the periphery of a well by a guard band. CONSTITUTION:The circuit is formed which passes the n<+> diffusion resistor through a poly Si resistor 8 from a bonding pad B.P and one part itself thereof is grounded through a diode D1 and the other part thereof through a protective diode D2. Accordingly, the protective diode which is easy to be broken most by the electrostatic breakdown is protected. Current concentration can be prevented by the breakdown of a junction diode which can be parasitized to diffusion resistor itself. The latch-up to a MOSIC at the time when minus charges are injected into a substrate by the diffusion resistor 4 due to noises, etc. is obviated by means of the guard band 7.
JP55148332A 1980-10-24 1980-10-24 Protective circuit device for semiconductor Pending JPS5772376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148332A JPS5772376A (en) 1980-10-24 1980-10-24 Protective circuit device for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148332A JPS5772376A (en) 1980-10-24 1980-10-24 Protective circuit device for semiconductor

Publications (1)

Publication Number Publication Date
JPS5772376A true JPS5772376A (en) 1982-05-06

Family

ID=15450398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148332A Pending JPS5772376A (en) 1980-10-24 1980-10-24 Protective circuit device for semiconductor

Country Status (1)

Country Link
JP (1) JPS5772376A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0109070A1 (en) * 1982-11-11 1984-05-23 Kabushiki Kaisha Toshiba MOS type semiconductor device
JPS6097663A (en) * 1983-10-07 1985-05-31 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン integrated circuit
JPS60154554A (en) * 1984-01-24 1985-08-14 Nec Corp Complementary type insulated gate field effect semiconductor device
JPS62125659A (en) * 1985-11-26 1987-06-06 Toshiba Corp Input protecting circuit
JPH01139455U (en) * 1988-03-18 1989-09-22
JPH0391264A (en) * 1989-09-01 1991-04-16 Toshiba Micro Electron Kk Semiconductor device equipped with input protective circuit
EP1989738A4 (en) * 2006-02-23 2012-07-25 Freescale Semiconductor Inc ACOUSTIC ISOLATION BETWEEN BLOCKS IN AN INTEGRATED CIRCUIT CHIP

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101283A (en) * 1978-01-27 1979-08-09 Hitachi Ltd Gate protective device
JPS5591171A (en) * 1978-12-28 1980-07-10 Mitsubishi Electric Corp Semiconductor integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101283A (en) * 1978-01-27 1979-08-09 Hitachi Ltd Gate protective device
JPS5591171A (en) * 1978-12-28 1980-07-10 Mitsubishi Electric Corp Semiconductor integrated circuit device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0109070A1 (en) * 1982-11-11 1984-05-23 Kabushiki Kaisha Toshiba MOS type semiconductor device
JPS6097663A (en) * 1983-10-07 1985-05-31 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン integrated circuit
JPS60154554A (en) * 1984-01-24 1985-08-14 Nec Corp Complementary type insulated gate field effect semiconductor device
JPS62125659A (en) * 1985-11-26 1987-06-06 Toshiba Corp Input protecting circuit
JPH01139455U (en) * 1988-03-18 1989-09-22
JPH0391264A (en) * 1989-09-01 1991-04-16 Toshiba Micro Electron Kk Semiconductor device equipped with input protective circuit
EP1989738A4 (en) * 2006-02-23 2012-07-25 Freescale Semiconductor Inc ACOUSTIC ISOLATION BETWEEN BLOCKS IN AN INTEGRATED CIRCUIT CHIP
US9048110B2 (en) 2006-02-23 2015-06-02 Freescale Semiconductor Inc. Noise isolation between circuit blocks in an integrated circuit chip

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