JPS5772380A - Mis type semiconductor device - Google Patents

Mis type semiconductor device

Info

Publication number
JPS5772380A
JPS5772380A JP55149205A JP14920580A JPS5772380A JP S5772380 A JPS5772380 A JP S5772380A JP 55149205 A JP55149205 A JP 55149205A JP 14920580 A JP14920580 A JP 14920580A JP S5772380 A JPS5772380 A JP S5772380A
Authority
JP
Japan
Prior art keywords
film
onto
silicon film
shaped
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55149205A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55149205A priority Critical patent/JPS5772380A/en
Publication of JPS5772380A publication Critical patent/JPS5772380A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To shorten dimensions required as the semiconductor device largely by decreasing the positioning processes with eyes of a photo-mask. CONSTITUTION:An oxide film 2 and a nitride film 3 are formed onto a P type silicon substrate 1. A photo-resist is applied onto the nitride film 3, a mask is contacted, and a section corresponding to a section except an electrode forming section 5 is removed. A thermally oxidized SiO2 film 4 is shaped as an isolation film. A silicon film 6 is formed through a CVD method, and a polycrystal silicon film 6a is shaped onto the oxide film 4 and a single crystal silicon film 6c onto the electrode forming section 5. An oxide film 7 and a silicon film 8 are molded onto the silicon film 6, and a gate electrode 8 is formed. The polycrystal silicon film connected to a source region 9 and a drain region 10 is removed selectively, electrodes 9a, 10a are shaped, and a protective film 11 and a contact hole 12 are molded.
JP55149205A 1980-10-24 1980-10-24 Mis type semiconductor device Pending JPS5772380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55149205A JPS5772380A (en) 1980-10-24 1980-10-24 Mis type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55149205A JPS5772380A (en) 1980-10-24 1980-10-24 Mis type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5772380A true JPS5772380A (en) 1982-05-06

Family

ID=15470115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55149205A Pending JPS5772380A (en) 1980-10-24 1980-10-24 Mis type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5772380A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58173603U (en) * 1982-05-17 1983-11-19 紀伊産業株式会社 Inlet structure of simple garbage container

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730372A (en) * 1980-07-31 1982-02-18 Fujitsu Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730372A (en) * 1980-07-31 1982-02-18 Fujitsu Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58173603U (en) * 1982-05-17 1983-11-19 紀伊産業株式会社 Inlet structure of simple garbage container

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