JPS5772386A - Junction type field-effect semiconductor device - Google Patents

Junction type field-effect semiconductor device

Info

Publication number
JPS5772386A
JPS5772386A JP55148310A JP14831080A JPS5772386A JP S5772386 A JPS5772386 A JP S5772386A JP 55148310 A JP55148310 A JP 55148310A JP 14831080 A JP14831080 A JP 14831080A JP S5772386 A JPS5772386 A JP S5772386A
Authority
JP
Japan
Prior art keywords
region
gate
drain region
semiconductor device
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55148310A
Other languages
Japanese (ja)
Inventor
Yasunobu Tanizaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55148310A priority Critical patent/JPS5772386A/en
Publication of JPS5772386A publication Critical patent/JPS5772386A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To relax field concentration between both the first gate region and a drain region and near the regions, and to improve voltage resisting property by forming structure which separates the first gate region from the drain region. CONSTITUTION:A P<+> type source region 2 and the drain region 3 are shaped to an N type semiconductor 1, and the N type gate region 5 is formed into a P type channel region 4, one part thereof is exposed to the surface side, at a predetermined interval from the drain region 3 between both regions. The gate region 5 functions as the first gate, and overlaps on the source region 2, bus is separated from the drain region 3. According to such constitution, the field concentration between both the first gate region 5 and the drain region and near the regions can be relaxed.
JP55148310A 1980-10-24 1980-10-24 Junction type field-effect semiconductor device Pending JPS5772386A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148310A JPS5772386A (en) 1980-10-24 1980-10-24 Junction type field-effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148310A JPS5772386A (en) 1980-10-24 1980-10-24 Junction type field-effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5772386A true JPS5772386A (en) 1982-05-06

Family

ID=15449922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148310A Pending JPS5772386A (en) 1980-10-24 1980-10-24 Junction type field-effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5772386A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006086548A (en) * 2005-12-12 2006-03-30 Nissan Motor Co Ltd Field effect transistor
JP2006086549A (en) * 2005-12-12 2006-03-30 Nissan Motor Co Ltd Field effect transistor and manufacturing method thereof
EP1779439A4 (en) * 2004-06-03 2008-10-01 Widebandgap Llc SIDE CHANNEL TRANSISTOR
JP2009521804A (en) * 2005-12-22 2009-06-04 アナログ デバイセス インコーポレーテッド JFET with drain and / or source deformation implant

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435686A (en) * 1977-08-25 1979-03-15 Matsushita Electric Ind Co Ltd Field effect semiconductor device of junction type
JPS5435689A (en) * 1977-08-25 1979-03-15 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435686A (en) * 1977-08-25 1979-03-15 Matsushita Electric Ind Co Ltd Field effect semiconductor device of junction type
JPS5435689A (en) * 1977-08-25 1979-03-15 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1779439A4 (en) * 2004-06-03 2008-10-01 Widebandgap Llc SIDE CHANNEL TRANSISTOR
JP2006086548A (en) * 2005-12-12 2006-03-30 Nissan Motor Co Ltd Field effect transistor
JP2006086549A (en) * 2005-12-12 2006-03-30 Nissan Motor Co Ltd Field effect transistor and manufacturing method thereof
JP2009521804A (en) * 2005-12-22 2009-06-04 アナログ デバイセス インコーポレーテッド JFET with drain and / or source deformation implant

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