JPS5773945A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5773945A
JPS5773945A JP14945280A JP14945280A JPS5773945A JP S5773945 A JPS5773945 A JP S5773945A JP 14945280 A JP14945280 A JP 14945280A JP 14945280 A JP14945280 A JP 14945280A JP S5773945 A JPS5773945 A JP S5773945A
Authority
JP
Japan
Prior art keywords
electrode
cathode
main
gate
former
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14945280A
Other languages
Japanese (ja)
Inventor
Hitoshi Onuki
Hiroshi Soeno
Hirokane Morita
Kyukichi Onodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14945280A priority Critical patent/JPS5773945A/en
Publication of JPS5773945A publication Critical patent/JPS5773945A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/233—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes

Landscapes

  • Die Bonding (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To prevent a short circuit between electrodes by a method wherein, in a pressure welded type large scale semiconductor device provided with a first main electrode and a control electrode on the first main surface of a substrate, and a second main electrode on the other main surface, an Al alloy containing the specified amount of Cu or Si is used at the first main electrode. CONSTITUTION:An anode metal plate 10 is attached to an electrode 8 on a p-emitter layer 5 with large capacitance, for instance, in a gate turn-off thyristor. An electrode 6 is provided in an n-emitter region 2 formed in a p-base layer 3 and a cathode metal plate 9 is allowed to contact the electrode 6 so that current flows. The cathode electrode 6 and a gate electrode 7 are positioned mutually in a zigzag shape and the former is formed simultaneously with the latter. In this case, the material quality of the former is defined as an Al alloy containing, for instance, 0.5-5wt% of Cu or 1-13wt% of Si. By so doing, comparing with the use of pure Al, that of the Al alloy can minimize the deformation of an electrode due to added pressure and prevent the occurrence of a short between cathode and gate electrodes.
JP14945280A 1980-10-27 1980-10-27 Semiconductor device Pending JPS5773945A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14945280A JPS5773945A (en) 1980-10-27 1980-10-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14945280A JPS5773945A (en) 1980-10-27 1980-10-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5773945A true JPS5773945A (en) 1982-05-08

Family

ID=15475423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14945280A Pending JPS5773945A (en) 1980-10-27 1980-10-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5773945A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257166A (en) * 1984-06-01 1985-12-18 Hitachi Ltd Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944680A (en) * 1972-06-28 1974-04-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944680A (en) * 1972-06-28 1974-04-26

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257166A (en) * 1984-06-01 1985-12-18 Hitachi Ltd Semiconductor device

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