JPS6457680A - Compound semiconductor integrated circuit device - Google Patents

Compound semiconductor integrated circuit device

Info

Publication number
JPS6457680A
JPS6457680A JP63057257A JP5725788A JPS6457680A JP S6457680 A JPS6457680 A JP S6457680A JP 63057257 A JP63057257 A JP 63057257A JP 5725788 A JP5725788 A JP 5725788A JP S6457680 A JPS6457680 A JP S6457680A
Authority
JP
Japan
Prior art keywords
layer
source
semiconductor
ohmic contact
drain electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63057257A
Other languages
Japanese (ja)
Other versions
JPH0750781B2 (en
Inventor
Shigeru Kuroda
Takashi Mimura
Seiji Notomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5725788A priority Critical patent/JPH0750781B2/en
Publication of JPS6457680A publication Critical patent/JPS6457680A/en
Publication of JPH0750781B2 publication Critical patent/JPH0750781B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To simplify the high integrated, high speed manufacturing processes while enabling a Schottky gate electrode and an ohmic electrode to be integrated with each other using the same material by a method wherein an ohmic contact layer in non-alloy contact with a metal forming source.drain electrodes is provided below the source.drain electrodes. CONSTITUTION:An active layer 12 comprising the first semiconductor and having a channel region, source.drain regions is formed on a compound semiconductor substrate 11; an electron fed layer 13 containing impurity and comprising the second semiconductor in less electron affinity than that of the first semiconductor is formed on the active layer 12; and an intermediate layer 14 comprising the third semiconductor is formed on the source.drain regions. Next, an ohmic contact layer 15 comprising the fourth semiconductor and in non-alloy ohmic contact with metal is formed on the intermediate layer 14; source.drain electrodes 19S, 19D in non-alloy ohmic contact with metal is formed on the layer 15; and a Schottky gate electrode 19G comprising the same metal as that of the source.drain electrodes 19S, 19D is formed on a channel region on the electron fed layer 13.
JP5725788A 1987-03-18 1988-03-10 Compound semiconductor integrated circuit device Expired - Lifetime JPH0750781B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5725788A JPH0750781B2 (en) 1987-03-18 1988-03-10 Compound semiconductor integrated circuit device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6109787 1987-03-18
JP62-61097 1987-03-18
JP5725788A JPH0750781B2 (en) 1987-03-18 1988-03-10 Compound semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS6457680A true JPS6457680A (en) 1989-03-03
JPH0750781B2 JPH0750781B2 (en) 1995-05-31

Family

ID=26398273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5725788A Expired - Lifetime JPH0750781B2 (en) 1987-03-18 1988-03-10 Compound semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPH0750781B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02273942A (en) * 1989-04-17 1990-11-08 Sumitomo Electric Ind Ltd High electron mobility transistor and manufacture thereof
JPH06169065A (en) * 1992-12-01 1994-06-14 Nec Corp Method for manufacturing compound semiconductor integrated circuit
JPH07312373A (en) * 1994-05-18 1995-11-28 Nec Corp Field effect transistor and method of manufacturing the same
JP2007324263A (en) * 2006-05-31 2007-12-13 Matsushita Electric Ind Co Ltd Field effect transistor and manufacturing method thereof
JP2013175782A (en) * 2005-12-13 2013-09-05 Cree Inc Semiconductor devices including implanted regions and protective layers, and method of forming the same
JP2013179337A (en) * 2006-11-06 2013-09-09 Cree Inc Manufacturing method of semiconductor device including implantation region for forming low resistance contact in embedded layer, and relevant device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123272A (en) * 1982-12-28 1984-07-17 Fujitsu Ltd Compound semiconductor device
JPS59172776A (en) * 1983-03-23 1984-09-29 Oki Electric Ind Co Ltd Manufacturing method of semiconductor device
JPS6050965A (en) * 1983-08-31 1985-03-22 Toshiba Corp Field effect transistor and manufacture thereof
JPS6050966A (en) * 1983-08-31 1985-03-22 Toshiba Corp Manufacture of field effect transistor
JPS6064430A (en) * 1983-09-19 1985-04-13 Oki Electric Ind Co Ltd Manufacture of gaas group compound semiconductor device
JPS63187666A (en) * 1987-01-30 1988-08-03 Nippon Telegr & Teleph Corp <Ntt> Manufacture of field-effect transistor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123272A (en) * 1982-12-28 1984-07-17 Fujitsu Ltd Compound semiconductor device
JPS59172776A (en) * 1983-03-23 1984-09-29 Oki Electric Ind Co Ltd Manufacturing method of semiconductor device
JPS6050965A (en) * 1983-08-31 1985-03-22 Toshiba Corp Field effect transistor and manufacture thereof
JPS6050966A (en) * 1983-08-31 1985-03-22 Toshiba Corp Manufacture of field effect transistor
JPS6064430A (en) * 1983-09-19 1985-04-13 Oki Electric Ind Co Ltd Manufacture of gaas group compound semiconductor device
JPS63187666A (en) * 1987-01-30 1988-08-03 Nippon Telegr & Teleph Corp <Ntt> Manufacture of field-effect transistor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02273942A (en) * 1989-04-17 1990-11-08 Sumitomo Electric Ind Ltd High electron mobility transistor and manufacture thereof
JPH06169065A (en) * 1992-12-01 1994-06-14 Nec Corp Method for manufacturing compound semiconductor integrated circuit
JPH07312373A (en) * 1994-05-18 1995-11-28 Nec Corp Field effect transistor and method of manufacturing the same
JP2013175782A (en) * 2005-12-13 2013-09-05 Cree Inc Semiconductor devices including implanted regions and protective layers, and method of forming the same
US9318594B2 (en) 2005-12-13 2016-04-19 Cree, Inc. Semiconductor devices including implanted regions and protective layers
JP2007324263A (en) * 2006-05-31 2007-12-13 Matsushita Electric Ind Co Ltd Field effect transistor and manufacturing method thereof
JP2013179337A (en) * 2006-11-06 2013-09-09 Cree Inc Manufacturing method of semiconductor device including implantation region for forming low resistance contact in embedded layer, and relevant device
US9984881B2 (en) 2006-11-06 2018-05-29 Cree, Inc. Methods of fabricating semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices

Also Published As

Publication number Publication date
JPH0750781B2 (en) 1995-05-31

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