JPS5773955A - Resin sealed type semiconductor device - Google Patents

Resin sealed type semiconductor device

Info

Publication number
JPS5773955A
JPS5773955A JP55150355A JP15035580A JPS5773955A JP S5773955 A JPS5773955 A JP S5773955A JP 55150355 A JP55150355 A JP 55150355A JP 15035580 A JP15035580 A JP 15035580A JP S5773955 A JPS5773955 A JP S5773955A
Authority
JP
Japan
Prior art keywords
resin
semiconductor device
silica
sealing
rubber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55150355A
Other languages
Japanese (ja)
Inventor
Toshio Oishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55150355A priority Critical patent/JPS5773955A/en
Publication of JPS5773955A publication Critical patent/JPS5773955A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H10W42/25—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons against alpha rays, e.g. for outer space applications
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07551—Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To reduce the cost of a device with superior temperature cycling resistance and having a means to prevent malfunction due to alpha rays by a device wherein a first resin film containing inorganic synthetic fillers but imposing no rubber-like property is provided on the surface of an element and thereafer second resin is molded to seal the device. CONSTITUTION:An element 2 such as MOSRAM is bonded and connected to a laad frame 3. For example, epoxy resin containing filler powder such as synthetic silica of 20-80wt% is applied on the surface of the element 2 by potting and then, hardened to form a resin film 5 with a thickness of about 30-50mum. Subsequently, a semiconductor device is completed by molding and sealing it with usual sealing resin 1 filled with molten silica. By so doing, it becomes possible o block alpha rays which are generated from the molten silica in the sealing resin 1 and hence, to prevent the malfunction. The coating resin 5 has no rubber-like property, so that the temperature cycling resistance is not imparied. In addition, an used amount of expensive synthetic silica can be reduced and this entails the reduction of cost.
JP55150355A 1980-10-27 1980-10-27 Resin sealed type semiconductor device Pending JPS5773955A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55150355A JPS5773955A (en) 1980-10-27 1980-10-27 Resin sealed type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55150355A JPS5773955A (en) 1980-10-27 1980-10-27 Resin sealed type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5773955A true JPS5773955A (en) 1982-05-08

Family

ID=15495170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55150355A Pending JPS5773955A (en) 1980-10-27 1980-10-27 Resin sealed type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5773955A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512847A (en) * 1983-01-31 1996-04-30 Hitachi, Ltd. BiCMOS tri-state output driver
US5798400A (en) * 1995-01-05 1998-08-25 Toray Industries, Inc. Epoxy resin compound
JP2019067876A (en) * 2017-09-29 2019-04-25 Ｈｏｙａ Ｃａｎｄｅｏ Ｏｐｔｒｏｎｉｃｓ株式会社 Optical semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512847A (en) * 1983-01-31 1996-04-30 Hitachi, Ltd. BiCMOS tri-state output driver
US5798400A (en) * 1995-01-05 1998-08-25 Toray Industries, Inc. Epoxy resin compound
US5985455A (en) * 1995-01-05 1999-11-16 Toray Industries, Inc. Semiconductor element sealed with an epoxy resin compound
JP2019067876A (en) * 2017-09-29 2019-04-25 Ｈｏｙａ Ｃａｎｄｅｏ Ｏｐｔｒｏｎｉｃｓ株式会社 Optical semiconductor device

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