JPS5773961A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5773961A
JPS5773961A JP55149895A JP14989580A JPS5773961A JP S5773961 A JPS5773961 A JP S5773961A JP 55149895 A JP55149895 A JP 55149895A JP 14989580 A JP14989580 A JP 14989580A JP S5773961 A JPS5773961 A JP S5773961A
Authority
JP
Japan
Prior art keywords
layer
poly
prevent
cover
diffusion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55149895A
Other languages
Japanese (ja)
Other versions
JPS6054789B2 (en
Inventor
Kenji Minami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55149895A priority Critical patent/JPS6054789B2/en
Publication of JPS5773961A publication Critical patent/JPS5773961A/en
Publication of JPS6054789B2 publication Critical patent/JPS6054789B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4451—Semiconductor materials, e.g. polysilicon

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the electromigration due to current concentration by a device wherein a poly-Si layer is coated to cover an end region of the contact surface between a resistance layer such as a diffusion layer formed on the main plane of a substrate and a low resistance layer formed of Al or others, including a non-contact part adjacent to the end region. CONSTITUTION:An Al wiring layer 12 is connected through an opening of an insulative film to a resistor 11 in a contact state, which is made of an N<+> diffusion layer formed in a P type substrate (for example, a source/drain region of MOSFET). A poly-Si layer 13 is coated over a part of the insulative film and a part of the N<+> layer 11 to cover an end portion (X=0) of the openings so that a current flowing from the diffusion layer 11 to the Al layer 12 is shunted at the end part of the opening. Thus, the resistance layer 13 formed of poly-Si functions to prevent concentration of currents. As a result, it becomes possible to prevent the occurrence of electromigration in the Al layer 12 and also to avoid troubles such as disconnections without increasing a width of the contact surface.
JP55149895A 1980-10-25 1980-10-25 semiconductor equipment Expired JPS6054789B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55149895A JPS6054789B2 (en) 1980-10-25 1980-10-25 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55149895A JPS6054789B2 (en) 1980-10-25 1980-10-25 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5773961A true JPS5773961A (en) 1982-05-08
JPS6054789B2 JPS6054789B2 (en) 1985-12-02

Family

ID=15484959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55149895A Expired JPS6054789B2 (en) 1980-10-25 1980-10-25 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6054789B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0277152A (en) * 1988-06-01 1990-03-16 Nec Corp Semiconductor integrated circuit device
JPH05315593A (en) * 1991-07-19 1993-11-26 Nec Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0277152A (en) * 1988-06-01 1990-03-16 Nec Corp Semiconductor integrated circuit device
JPH05315593A (en) * 1991-07-19 1993-11-26 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6054789B2 (en) 1985-12-02

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