JPS5773983A - Semiconductor photodetector - Google Patents

Semiconductor photodetector

Info

Publication number
JPS5773983A
JPS5773983A JP55150361A JP15036180A JPS5773983A JP S5773983 A JPS5773983 A JP S5773983A JP 55150361 A JP55150361 A JP 55150361A JP 15036180 A JP15036180 A JP 15036180A JP S5773983 A JPS5773983 A JP S5773983A
Authority
JP
Japan
Prior art keywords
layer
type
density
grown
boundary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55150361A
Other languages
Japanese (ja)
Other versions
JPH0258792B2 (en
Inventor
Yoshiharu Tashiro
Kenshin Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55150361A priority Critical patent/JPS5773983A/en
Publication of JPS5773983A publication Critical patent/JPS5773983A/en
Publication of JPH0258792B2 publication Critical patent/JPH0258792B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To improve the dark current characteristics of a semiconductor photodetector by forming a reversely conductive type layer and further a reversely conductive and forbidden band width narrow layer on one conductive type semiconductor substrate, forming a mesa to form a hetero junction type semiconductor photodetector by specifying the relationship between the impurity density of the respective layers and the length and thickness of the projected mesa. CONSTITUTION:A P<+> type buffer layer 21 of approx. 1X10<19>/cm<3> of inpurity density N1 is grown by liquid or vapor phase on a P<+> type InP substrate 20, and an N<-> type InP layer 22 of approx. 1.2X10<16>/cm<3> of density N2 is laminated and grown thereon. Then, the layers 22, 21 are formed in mesa shape while forming a recess at the center of the layer 22 by a photoresist treatment, and N<-> type InGaAs layer of 1.5X10<16>/cm<3> of density is grown on the layer 22 including the recess. Thus, the relation of the densities is between N1>>N2, and the relationship between the effective length d1 from the boundary of the layers 21, 22 to the boundary projected from the boundary and the thickness d2 except the projection is specified as the right formula.
JP55150361A 1980-10-27 1980-10-27 Semiconductor photodetector Granted JPS5773983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55150361A JPS5773983A (en) 1980-10-27 1980-10-27 Semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55150361A JPS5773983A (en) 1980-10-27 1980-10-27 Semiconductor photodetector

Publications (2)

Publication Number Publication Date
JPS5773983A true JPS5773983A (en) 1982-05-08
JPH0258792B2 JPH0258792B2 (en) 1990-12-10

Family

ID=15495304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55150361A Granted JPS5773983A (en) 1980-10-27 1980-10-27 Semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS5773983A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54112189A (en) * 1978-02-22 1979-09-01 Mitsubishi Electric Corp Mesa semiconductor device
JPS5513990A (en) * 1978-07-18 1980-01-31 Nec Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54112189A (en) * 1978-02-22 1979-09-01 Mitsubishi Electric Corp Mesa semiconductor device
JPS5513990A (en) * 1978-07-18 1980-01-31 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPH0258792B2 (en) 1990-12-10

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