JPS5748286A - Manufacture of buried hetero structured semiconductor laser - Google Patents

Manufacture of buried hetero structured semiconductor laser

Info

Publication number
JPS5748286A
JPS5748286A JP12326180A JP12326180A JPS5748286A JP S5748286 A JPS5748286 A JP S5748286A JP 12326180 A JP12326180 A JP 12326180A JP 12326180 A JP12326180 A JP 12326180A JP S5748286 A JPS5748286 A JP S5748286A
Authority
JP
Japan
Prior art keywords
type inp
layer
epitaxial growth
growth process
built
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12326180A
Other languages
Japanese (ja)
Other versions
JPS6152999B2 (en
Inventor
Ikuo Mito
Mitsuhiro Kitamura
Kazuhisa Kaede
Isao Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12326180A priority Critical patent/JPS5748286A/en
Priority to US06/252,773 priority patent/US4425650A/en
Priority to DE8181102910T priority patent/DE3165007D1/en
Priority to EP81102910A priority patent/EP0038085B1/en
Publication of JPS5748286A publication Critical patent/JPS5748286A/en
Publication of JPS6152999B2 publication Critical patent/JPS6152999B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To improve yield by inclusion of the first epitaxial growth process which grows a multi-layer film structured wafer on an N type InP substrate, a process through which a mesa stripe is built and the second epitaxial growth process. CONSTITUTION:The first epitaxial growth process through which a multi-layer film structured wafer consisting of semiconductor layers which include an In1-xGax As1-yPy active layer is built on an N type InP substrate 20. A process through which a mesa stripe 26 is built by applying mesa etching to be extended deeper than the active layer. The following second epitaxial growth process through which a P type InP current blocking layer 27, an N type InP current confining layer 28 and a P type InP buried layer 29 are laminted except the upper surface of the mesa stripe. Through these processes yield in manufacturing InGaAsP BH LD is improved.
JP12326180A 1980-04-15 1980-09-05 Manufacture of buried hetero structured semiconductor laser Granted JPS5748286A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP12326180A JPS5748286A (en) 1980-09-05 1980-09-05 Manufacture of buried hetero structured semiconductor laser
US06/252,773 US4425650A (en) 1980-04-15 1981-04-10 Buried heterostructure laser diode
DE8181102910T DE3165007D1 (en) 1980-04-15 1981-04-15 Buried heterostructure laser diode and method for making the same
EP81102910A EP0038085B1 (en) 1980-04-15 1981-04-15 Buried heterostructure laser diode and method for making the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12326180A JPS5748286A (en) 1980-09-05 1980-09-05 Manufacture of buried hetero structured semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5748286A true JPS5748286A (en) 1982-03-19
JPS6152999B2 JPS6152999B2 (en) 1986-11-15

Family

ID=14856179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12326180A Granted JPS5748286A (en) 1980-04-15 1980-09-05 Manufacture of buried hetero structured semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5748286A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5982109A (en) * 1982-11-02 1984-05-12 Nippon Steel Corp Method for controlling width of rolled material
JPS60158910A (en) * 1984-01-30 1985-08-20 Toshiba Corp Control method of rolling in sheet width direction

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5982109A (en) * 1982-11-02 1984-05-12 Nippon Steel Corp Method for controlling width of rolled material
JPS60158910A (en) * 1984-01-30 1985-08-20 Toshiba Corp Control method of rolling in sheet width direction

Also Published As

Publication number Publication date
JPS6152999B2 (en) 1986-11-15

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